Nondestructive one-dimensional scanning capacitance microscope dopant profile determination method and its application to three-dimensional dopant profiles

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 18, Issue 4 I, 2000, Pages 1338-1344

  Kang, Eu Seok ^a   Kang, Jeong Won ^a   Hwang, Ho Jung ^a   Lee, Jun Ha ^b  

^a Chung Ang University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALGORITHMS; CAPACITANCE MEASUREMENT; COMPUTER SOFTWARE; FINITE DIFFERENCE METHOD; MICROSCOPIC EXAMINATION; NONDESTRUCTIVE EXAMINATION; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; VOLTAGE MEASUREMENT;

SCANNING CAPACITANCE MICROSCOPY (SCM); SUCCESSIVE OVER RELAXATION (SOR) SOLVER;

SEMICONDUCTOR DOPING;

EID: 0034229782     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.582473     Document Type: Article

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