Topography dependent doping distribution in selectively regrown InP studied by scanning capacitance microscopy

Applied Physics Letters

Volumn 72, Issue 7, 1998, Pages 815-817

  Hammar, M ^a   Rodriguez Messmer E ^a   Luzuy, M ^a   Anand, S ^a   Lourdudoss, S ^a   Landgren, G ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

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EID: 21944450874     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120902     Document Type: Article

References (13)

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2. R. Göbel, H, Janning, and H. Buckhard, Proceedings of the 9th International Conference on InP and related Materials, Hyannis, MA, 11-15 May 1997, p. 55.
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9. S. Lourdudoss and O. Kjebon, IEEE J. Sel. Top. Quantum Electron. 3, 749 (1997).
10. Also region 3 seems to be partly influenced by the adjacent undoped layer, but one may still distinguish a distinct level, appearing as a shoulder in the line profile of Fig. 3(b), clearly different from the level of region 5.
11. A comparison between Figs. 1 and 3 reveals that the triangular regions are slightly different in geometry. This is not specific for the involved dopants, but rather reflects a stochastic nature of the initial crystallographic evolution. Sometimes the triangles are defined by the two intersecting (111)B planes and the mesa wall, while in other cases the (001) substrate, or even an intermediate plane, serve as one boundary.
12. See also A. N. Erickson, D. M. Adderton, Y. E. Strausser, and R. J. Tench, Solid State Technol. 40, 125 (1997).
13. S. Lourdudoss, O. Kjebon, S. Nilsson, N. Nordell, and C. Keller, in Semi-Insulating III-V Materials, edited by M. Godlewski (World Scientific, Singapore, 1994), p. 255.