-
1
-
-
3843091866
-
Char-acterization of two-dimensional dopant profiles: Status and review
-
J. Ehrstein, R. Mathur, and G, McGuire, Eds. MCNC, Research Triangle Park, NC, Mar. 20-22
-
A. C. Diebold and M. Kump, J. J. Kopanski, and D. G. Seiler, "Char-acterization of two-dimensional dopant profiles: Status and review," in Proc. 3rd Int. Workshop on the Measurement and Characterization of Ultra-Shallow Doping Profiles in Semiconductors, J. Ehrstein, R. Mathur, and G, McGuire, Eds. MCNC, Research Triangle Park, NC, Mar. 20-22, 1995.
-
(1995)
Proc. 3rd Int. Workshop on the Measurement and Characterization of Ultra-Shallow Doping Profiles in Semiconductors
-
-
Diebold, A.C.1
Kump, M.2
Kopanski, J.J.3
Seiler, D.G.4
-
2
-
-
84956267795
-
+-n junction capacitance with three-dimensional impurity profiling method using scanning tunneling microscopy
-
+-n junction capacitance with three-dimensional impurity profiling method using scanning tunneling microscopy," Jpn. J. Appl. Phys., vol. 30, p. 3638, 1991.
-
(1991)
Jpn. J. Appl. Phys.
, vol.30
, pp. 3638
-
-
Tanimoto, M.1
Douseki, T.2
Takagami, T.3
-
3
-
-
0000213472
-
Observation of pn junctions on implanted silicon using a scanning tunneling microscope
-
S. Hosaka, S. Hosoki, K. Takata, K. Horiuchi, and N. Natsuaki, "Observation of pn junctions on implanted silicon using a scanning tunneling microscope," Appl. Phys. Lett., vol. 53, p. 487, 1988.
-
(1988)
Appl. Phys. Lett.
, vol.53
, pp. 487
-
-
Hosaka, S.1
Hosoki, S.2
Takata, K.3
Horiuchi, K.4
Natsuaki, N.5
-
4
-
-
0029270863
-
2-D dopant profiling in VLSI devices using dopant-selective etching: An atomic force microscopy study
-
Mar.
-
M. Barrett, M. Dennis, D. Tiffin, Y. Li, and C. K. Shih, "2-D dopant profiling in VLSI devices using dopant-selective etching: An atomic force microscopy study," IEEE Electron Device Lett., vol. 16, pp. 118-120, Mar. 1995.
-
(1995)
IEEE Electron Device Lett.
, vol.16
, pp. 118-120
-
-
Barrett, M.1
Dennis, M.2
Tiffin, D.3
Li, Y.4
Shih, C.K.5
-
5
-
-
0001680985
-
Lateral dopant profiling in semiconductors by force microscopy using capacitive detection
-
D. W. Abraham, C. Williams, J. Slikman, and H. K. Wickramasinghe, "Lateral dopant profiling in semiconductors by force microscopy using capacitive detection," J. Vac. Sci. Technol., vol. B9, p. 703, 1991.
-
(1991)
J. Vac. Sci. Technol.
, vol.B9
, pp. 703
-
-
Abraham, D.W.1
Williams, C.2
Slikman, J.3
Wickramasinghe, H.K.4
-
6
-
-
0000675572
-
Electrical profiling of Si(100) p-n junctions by scanning tunneling microscopy
-
July
-
E. T. Yu, M. B. Johnson, and J. M. Halbout, "Electrical profiling of Si(100) p-n junctions by scanning tunneling microscopy," Appl. Phys. Lett., vol. 61, pp. 201-203, July 1992.
-
(1992)
Appl. Phys. Lett.
, vol.61
, pp. 201-203
-
-
Yu, E.T.1
Johnson, M.B.2
Halbout, J.M.3
-
7
-
-
3843149600
-
Quantitative two-dimensional dopant profile measurement and inverse modeling by scanning capacitance microscopy
-
Jan.
-
Y. Huang and C. C. Williams, "Quantitative two-dimensional dopant profile measurement and inverse modeling by scanning capacitance microscopy," Appl. Phys. Lett., vol. 66, no. 3, p. 16, Jan. 1995.
-
(1995)
Appl. Phys. Lett.
, vol.66
, Issue.3
, pp. 16
-
-
Huang, Y.1
Williams, C.C.2
-
8
-
-
36448998615
-
Characterization of a point-contact on silicon using force microscopy-supported resistance measurements
-
Mar.
-
P. De Wolf, J. Snauwaert, T. Clarysse, W. Vandervorst, and L. Hellemans, "Characterization of a point-contact on silicon using force microscopy-supported resistance measurements," Appl. Phys. Lett., vol. 66, no. 12, pp. 1530-1532, Mar. 1995.
-
(1995)
Appl. Phys. Lett.
, vol.66
, Issue.12
, pp. 1530-1532
-
-
De Wolf, P.1
Snauwaert, J.2
Clarysse, T.3
Vandervorst, W.4
Hellemans, L.5
-
9
-
-
0000025526
-
Two-dimensional delineation of semiconductor doping by scanning resistance microscopy
-
Jan./Feb.
-
C. Shafai and D. J. Thomson, "Two-dimensional delineation of semiconductor doping by scanning resistance microscopy," J. Vac. Sci. Technol., vol. B12, no. 1, Jan./Feb. 1994.
-
(1994)
J. Vac. Sci. Technol.
, vol.B12
, Issue.1
-
-
Shafai, C.1
Thomson, D.J.2
-
10
-
-
0000829005
-
Cross sectional imaging of semiconductor device structures by scanning resistance microscopy
-
Jan./Feb.
-
J. N. Nxumalo, D. T. Shimizu, and D. J. Thomson, "Cross sectional imaging of semiconductor device structures by scanning resistance microscopy," J. Vac. Sci. Technol., vol. B14, no. 1, Jan./Feb. 1996.
-
(1996)
J. Vac. Sci. Technol.
, vol.B14
, Issue.1
-
-
Nxumalo, J.N.1
Shimizu, D.T.2
Thomson, D.J.3
-
11
-
-
3843129895
-
Cross-sectional imaging of semiconductor device structures by scanning resistance microscopy
-
J. Ehrstein, R. Mathur, and G. McGuire, Eds., MCNC, Research Triangle Park, NC, Mar. 20-22
-
_, "Cross-sectional imaging of semiconductor device structures by scanning resistance microscopy," in Proc. 3rd Int. Workshop on the Measurement and Characterization of Ultra-Shallow Doping Profiles in Semiconductors, J. Ehrstein, R. Mathur, and G. McGuire, Eds., MCNC, Research Triangle Park, NC, Mar. 20-22, 1995.
-
(1995)
Proc. 3rd Int. Workshop on the Measurement and Characterization of Ultra-Shallow Doping Profiles in Semiconductors
-
-
-
12
-
-
0037845364
-
Ion-implanted diamond tip for a scanning tunneling microscope
-
R. Kaneko and S. Oguchi, "Ion-implanted diamond tip for a scanning tunneling microscope," Jpn. J. Appl. Phys., vol. 29, no, 9, pp. 1854-1855, 1990.
-
(1990)
Jpn. J. Appl. Phys.
, vol.29
, Issue.9
, pp. 1854-1855
-
-
Kaneko, R.1
Oguchi, S.2
-
13
-
-
3843112489
-
AFM characterization of VLSI devices
-
NIST, Gaithersburg, MD, Mar. 24-25
-
G. Nuebuer and A. Erickson, "AFM characterization of VLSI devices," Workshop Summary Report: Industrial Application of Scanned Probe Microscopy, NIST, Gaithersburg, MD, Mar. 24-25, 1994.
-
(1994)
Workshop Summary Report: Industrial Application of Scanned Probe Microscopy
-
-
Nuebuer, G.1
Erickson, A.2
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