Slow state characterization by measurements of current-voltage characteristics of MOS capacitors

Microelectronics Reliability

Volumn 37, Issue 7 SPEC. ISS., 1997, Pages 1143-1146

  Dimitrijev, Sima ^a   Tanner, Philip ^a   Yao, Z Qiang ^b   Harrison, H Barry ^a  

^a GRIFFITH UNIVERSITY   (Australia)

^b AWA Microelectronics   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

VOLTAGE RAMPING TECHNIQUE;

CAPACITORS; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENT MEASUREMENT; ELECTRON ENERGY LEVELS; ELECTRON TUNNELING; SEMICONDUCTING SILICON; TRANSIENTS; VOLTAGE MEASUREMENT;

MOS DEVICES;

EID: 0031185764     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0026-2714(96)00276-4     Document Type: Article

References (7)

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2. Fleetwood, D. M., Winokur, P. S., Reber Jr, R. A., Meisenheimer, T. L., Schwank, J. R., Shaneyfelt, M. R. and Riewe, L. C., Effects of oxide traps, interface traps, and "border traps" on metal-oxide-semiconductor devices. J. Appl. Phys., 1993, 73(10), 5058-5074.
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