Dissolution mechanism of the carbon islands at the SiO2/SiC interface

Materials Science Forum

Volumn 353-356, Issue , 2001, Pages 659-662

  Krafcsik, O H ^a   Josepovits, K V ^a   Deak P ^a  

^a BUDAPEST UNIVERSITY OF TECHNOLOGY AND ECONOMICS   (Hungary)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; AUGER ELECTRON SPECTROSCOPY; CARBON; DISSOLUTION; ELECTRIC PROPERTIES; HIGH TEMPERATURE EFFECTS; INTERDIFFUSION (SOLIDS); INTERFACES (MATERIALS); PARTIAL PRESSURE; SECONDARY ION MASS SPECTROMETRY; SILICA; X RAY PHOTOELECTRON SPECTROSCOPY;

AMORPHOUS CARBON LAYER; CAPACITANCE VOLTAGE MEASUREMENTS; CARBON ISLANDS;

SILICON CARBIDE;

EID: 4243784966     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (7)

1. V. V. Afanas'ev, A. Stesmans and Ch. I. Harris, ICSC III-N'97 Sweden p. 423.
2. M. Bassler, G. Pensl and V. Afanas'ev, Diamond and Rel. Mat. 6 (10) (1997) p. 1472.
3. J. Schmitt and R. Helbig, J. Electrochem. Soc. 141 (8) (1994) p. 2262.
4. Z. Zheng, R. E. Tressler and K. E. Spear, J. Electrochem. Soc. 137 (3) (1990) p. 854.
5. Ch. Köhler, Z. Hajnal, P. Deák, Th. Frauenheim, private communication
6. rd International Conference on Solid Surfaces, Vienna (1977) p. 2585.
7. L. E. Davis, N. C. MacDonald, P. W. Palmberg, G. E. Riach and R. E. Weber, Handbook of Auger Electron Spectroscopy, 2nd ed., Physical Electronics Industries Inc., Minnesota (1976)