메뉴 건너뛰기




Volumn 80, Issue 4, 1996, Pages 2467-2470

Modeling the growth of thin silicon oxide films on silicon

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0009150847     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363050     Document Type: Article
Times cited : (31)

References (19)
  • 4
    • 5344270811 scopus 로고
    • edited by P.A. Antognetti, D.A. Antoniadis, R.W. Dutton, and W.G. Oldman, NATO ASI Series, No. 62 Martinus, Wijhoff
    • J.D. Plummer and B.E. Deal, in Process and Device Simulation for MOSVLSI Circuits, edited by P.A. Antognetti, D.A. Antoniadis, R.W. Dutton, and W.G. Oldman, NATO ASI Series, No. 62 (Martinus, Wijhoff, 1983).
    • (1983) Process and Device Simulation for MOSVLSI Circuits
    • Plummer, J.D.1    Deal, B.E.2
  • 8
    • 85033832531 scopus 로고
    • Microelectronics Technology and Process Integration, edited by F.E. Chen and S.P. Murarka, SPIE Bellingham
    • S. Dimithrijev, H.B. Harrison, and D. Sweatman, in Microelectronics Technology and Process Integration, edited by F.E. Chen and S.P. Murarka, Proc. SPIE 2335 (SPIE Bellingham, 1994), pp. 271-281.
    • (1994) Proc. SPIE 2335 , pp. 271-281
    • Dimithrijev, S.1    Harrison, H.B.2    Sweatman, D.3
  • 14


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.