Extension of the Deal-Grove Oxidation Model to Include the Effects of Nitrogen

IEEE Transactions on Electron Devices

Volumn 43, Issue 2, 1996, Pages 267-272

  Dimitrijev, Sima ^a   Harrison, H ^a   Sweatman, Denis ^a  

^a GRIFFITH UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

DEAL-GROVE FORMULATION; GROWTH KINETIC THEORY; OXIDE SILICON INTERFACE; THERMAL OXIDATION;

COMPUTER SIMULATION; CONCENTRATION (PROCESS); EFFECTS; GROWTH KINETICS; KINETIC THEORY; MATHEMATICAL MODELS; NITROGEN OXIDES; OXIDATION; SEMICONDUCTING SILICON; SURFACES;

DIELECTRIC FILMS;

EID: 0030087211     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.481727     Document Type: Article

References (22)

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