Structure and electronic property of Si(100)/SiO2 interface

Microelectronic Engineering

Volumn 48, Issue 1, 1999, Pages 117-120

  Kaneta, Chioko ^a   Yamasaki, Takahiro ^a   Uchiyama, Toshihiro ^b   Uda, Tsuyoshi ^b   Terakura, Kiyoyuki ^c  

^a FUJITSU LABORATORIES LTD   (Japan)

^b JRCAT   (Japan)

^c NATL INST FOR ADV INTERDISC RES   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC STRUCTURE; ENERGY GAP; INTERFACES (MATERIALS); MOLECULAR DYNAMICS; SEMICONDUCTING SILICON; SILICA;

FIRST-PRINCIPLES MOLECULAR DYNAMICS;

SEMICONDUCTING FILMS;

EID: 0033190149     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00351-2     Document Type: Article

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