Influence of N2 carrier gas on surface stoichiometry in GaN MOVPE studied by surface photoabsorption

Journal of Crystal Growth

Volumn 189-190, Issue , 1998, Pages 301-304

  Kobayashi, Yasuyuki ^a   Kobayashi, Naoki ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

Carrier gas; GaN; H2; MOVPE; N2; Surface photo absorption

Indexed keywords

DESORPTION; LIGHT ABSORPTION; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; SAPPHIRE; SEMICONDUCTOR GROWTH; STOICHIOMETRY; SURFACE PHENOMENA; THERMAL EFFECTS;

GALLIUM NITRIDE; SURFACE PHOTOABSORPTION (SPA);

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032090875     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00268-1     Document Type: Article

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