Comparison of hydrogen and nitrogen as carrier gas for MOVPE growth of GaN

Journal of Crystal Growth

Volumn 189-190, Issue , 1998, Pages 335-339

  Schon O ^a,b   Schineller, B ^a   Heuken, M ^a,b   Beccard, R ^b  

^a RWTH AACHEN UNIVERSITY   (Germany)

^b AIXTRON AG   (Germany)

Author keywords

Carrier gas; GaN; MOVPE

Indexed keywords

HYDROGEN; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; NITRIDES; NITROGEN; NUCLEATION; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTOR GROWTH;

CARRIER GASES;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032090929     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00287-5     Document Type: Article

References (6)

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