Effect of carrier gas on the surface morphology and mosaic dispersion for GaN films by low-pressure MOCVD

Materials Research Society Symposium - Proceedings

Volumn 395, Issue , 1996, Pages 261-266

  Kistenmacher, T J ^a   Wickenden, D K ^a   Hawley, M E ^a   Leavitt, R P ^a  

^a JOHNS HOPKINS UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; ATOMIC FORCE MICROSCOPY; HYDROGEN; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; NITRIDES; NITROGEN; NUCLEATION; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SURFACES; THIN FILMS;

CARRIER GAS; MOSAIC DISPERSION; RECIPROCAL SPACE INTENSITY; SELF NUCLEATED FILMS; THREE DIMENSIONAL ISLAND GROWTH; TRIMETHYLGALLIUM; TWO DIMENSIONAL GROWTH; UNNUCLEATED FILMS; X RAY SCATTERING MEASUREMENTS;

FILM GROWTH;

EID: 0029746803     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)