Growth of GaN by atomic hydrogen-assisted molecular beam epitaxy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 10 PART A, 1998, Pages

  Okamoto, Yoshihiro ^a   Hashiguchi, Shinji ^a   Okada, Yoshitaka ^a   Kawabe, Mitsuo ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

Atomic hydrogen; GaN; III V nitride; MBE

Indexed keywords

ANNEALING; CLEANING; DEGRADATION; ELECTRON CYCLOTRON RESONANCE; HYDROGEN; IRRADIATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; PASSIVATION; SEMICONDUCTOR GROWTH;

ATOMIC HYDROGEN; THERMAL CLEANING;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032179798     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.l1109     Document Type: Article

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