High-permittivity perovskite thin films for dynamic random-access memories

MRS Bulletin

Volumn 21, Issue 7, 1996, Pages 46-52

  Kingon, A I ^a   Streiffer, S K ^a   Basceri, C ^a   Summerfelt, S R ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

BARIUM COMPOUNDS; CAPACITORS; CHEMICAL VAPOR DEPOSITION; ELECTRIC FIELDS; ELECTRODES; FERROELECTRIC MATERIALS; LEAKAGE CURRENTS; PERMITTIVITY; PEROVSKITE; POLARIZATION; RANDOM ACCESS STORAGE; THIN FILMS;

DIELECTRIC LIFETIME; DIELECTRIC THICKNESS; DYNAMIC RANDOM ACCESS MEMORIES; FERROELECTRIC FILMS; PEROVSKITE THIN FILMS;

DIELECTRIC FILMS;

EID: 0030190461     PISSN: 08837694     EISSN: None     Source Type: Journal    
DOI: 10.1557/S0883769400035910     Document Type: Article

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