MOCVD BaSrTiO3 for ≥1-Gbit DRAMs

Solid State Technology

Volumn 40, Issue 7, 1997, Pages 235-242

  Bilodeau, Steven M ^a,b,c,d   Carl, Ralph ^a,b,h   Van Buskirk, Peter ^a,d,e,f,g   Ward, Jack ^a,i,j  

^a Advanced Technology Materials Inc   (United States)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^c Hughes Danbury Optical Systems   (United States)

^d ATMI ^*  (United States)

^e UNIVERSITY OF BRIDGEPORT   (United States)

^f UNIVERSITY OF REDLANDS   (United States)

^g Optical Operations Directorate

^h Polytechnic University

ⁱ INDIANA UNIVERSITY   (United States)

^j NovaMOS Division of ATMI

more..

Author keywords

[No Author keywords available]

Indexed keywords

BARIUM TITANATE; ELECTRIC POTENTIAL; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; STOICHIOMETRY; THIN FILMS; VAPORIZATION;

BARIUM STRONTIUM TITANATE; POINT-OF-USE FLASH VAPORIZATION;

DYNAMIC RANDOM ACCESS STORAGE;

EID: 0031173539     PISSN: 0038111X     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article

References (12)

1. D. Kotecki, ' High-K Dielectric Materials for DRAM Capacitors,' Semiconductor International., p. 109, Nov. 1996.
2. 3 Thin Films by MOCVD for 1-Gbit DRAM Applications,' Integrated Ferroelectrics, 8, p. 201, 1995.
3. P. Fazan, 'Trends in the Development of ULSI DRAM Capacitors,' Integrated Ferroelectrics, 4, p 247, 1994.
4. P. VanBuskirk, S. Bilodeau, J. Roeder, P. Kirlin, 'Metalorganic Chemical Vapor Deposition of Complex Metal Oxide Thin Films by Liquid Source Chemical Vapor Deposition,' Jpn. J. Appl. Phys., 35, p. 2520, 1996.
5. The methodology we have used for composition measurement and feedback to aid in determining the proper solution concentrations for a desired film concentration is summarized in: P. Vanbuskirk, J. Roeder and S. Bilodeau, 'Manufacturing of Perovskite Thin Films Using Liquid Delivery MOCVD,' Integrated Ferroelectrics 10, p. 9, 1995.
6. 3 Thin films on Pt/Si,' Mat. Soc. Proc., Fall 1996.
7. 3 Thin Films for DRAMs and Integrated Decoupling Capacitors,' Proceedings of the 8th International Symposium on Integrated Ferroelectric, April 1996 (to be published in Integrated Ferroelectrics).
8. R.F. Pinizzotto et al., 'The Effect of Stoichiometry on the Microstructural and Electrical Properties of BST Thin Films,' presented at MRS Symposia Dec. 1994 (unpublished).
9. 2 Thin Films Prepared by RF-Sputtering for DRAM Application,' Jpn. J. Appl. Phys., 33, p 5187, 1994.
10. 2 Films Prepared by Liquid Source Chemical Vapor Deposition', Jpn. J. Appl. Phys., V 35, p. 2531, 1996.
11. 2 Thin Films Prepared by lon Beam Sputtering,' Appl. Phys. Lett., 64, 13, p. 1644, 1994.
12. 3 Films Prepared by Liquid Source Chemical Vapor Deposition,' Jpn. J. Appl. Phys., 33, p. 5129, 1994.