(Ba,Sr)TiO3 dielectrics for future stacked-capacitor DRAM

IBM Journal of Research and Development

Volumn 43, Issue 3, 1999, Pages 367-382

  Kotecki, D E ^a   Baniecki, J D ^b,c   Shen, H ^d   Laibowitz, R B ^c   Saenger, K L ^c   Lian, J J ^e   Shaw, T M ^e   Athavale, S D ^e   Cabral Jr , C ^e   Duncombe, P R ^e   Gutsche, M ^e   Kunkel, G ^e   Park, Y J ^e   Wang, Y Y ^e   Wise, R ^e  

^a IBM MICROELECTRONICS   (United States)

^b Och Spine at New York Presbyterian Hospitals   (United States)

^c IBM T J WATSON RESEARCH CENTER   (United States)

^d Siemens Microelectronics Inc   (United States)

^e Thomas J Watson Research Center ^*

Author keywords

[No Author keywords available]

Indexed keywords

BARIUM COMPOUNDS; CAPACITANCE; CAPACITORS; DYNAMIC RANDOM ACCESS STORAGE; ELECTRODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PLATINUM; THIN FILMS;

BARIUM STRONTIUM TITANATE; THIN FILM STRESS;

DIELECTRIC FILMS;

EID: 0032680399     PISSN: 00188646     EISSN: None     Source Type: Journal    
DOI: 10.1147/rd.433.0367     Document Type: Article

References (54)

1. The National Technology Roadmap for Semiconductors, Semiconductor Industry Association, San Jose, CA, 1997.
2. C. W. Teng, "DRAM Technology Trend," Proceedings of the 1995 International Symposium on VLSI Technology, Systems, and Applications, 1995, p. 295.
3. E. P. Gusev, H.-C. Lu, E. L. Garfunkel, T. Gustafsson, and M. L. Green, "Growth and Characterization of Ultrathin Nitrided Silicon Oxide Films," IBM J. Res. Develop. 43, 265 (1999, this issue).
4. D. A. Buchanan, "Scaling the Gate Dielectric: Materials, Integration, and Reliability," IBM J. Res. Develop. 43, 245 (1999, this issue).
5. P. C. Fazan, U.S. Patent 5,478,772, December 26, 1995; G. S. Sandhu and P. C. Fazan, U.S. Patent 5,506,166, April 9, 1996.
6. P. C. Fazan, U.S. Patent 5,478,772, December 26, 1995; G. S. Sandhu and P. C. Fazan, U.S. Patent 5,506,166, April 9, 1996.
7. Y. Nishioka, S. R. Summerfelt, K. Park, and P. Bhattacharya, U.S. Patent 5,656,852, August 12, 1997.
8. P. C. McIntyre and S. R. Summerfelt, "Kinetics and Mechanisms of TiN Oxidation Beneath Pt Thin Films," J. Appl. Phys. 82, 4577 (1997).
9. S. R. Summerfelt, U.S. Patent 5,504,041, April 2, 1996.
10. K. L. Saenger, A. Grill, and D. E. Kotecki, "Oxygen-Induced Inhibition of Noble Metal Suicide Formation: Implications for Electrode/Barrier Structures Used with Perovskite Materials," Mater. Res. Soc. Symp. Proc. 493, 143 (1998).
11. T. Hara, M. Tanaka, K. Sakiyama, S. Onishi, K. Ishihara, and J. Kudo, "Barrier Properties for Oxygen Diffusion in a TaSiN Layer," Jpn. J. Appl. Phys. 36 (Part 2), L893 (1997).
12. T. Hara, T. Kitamura, M. Tanaka, T. Kobayashi, K. Sakiyama, S. Onishi, K. Ishihara, J. Kudo, Y. Kino, and N. Yamashita, "Barrier Effect of TaSiN Layer for Oxygen Diffusion," J. Electrochem. Soc. 143, L264 (1996).
13. P. D. Agnello, C. Cabral, Jr., A. Grill, C. V. Jahnes, T. J. Licata, and R. A. Roy, U.S. Patent 5,576,579, November 19, 1996; A. Grill, C. Jahnes, and C. Cabral, Jr., "Layered TaSiN as an Oxidation Resistant Electrically Conductive Barrier," J. Mater. Res. 14, 1604 (1999).
14. P. D. Agnello, C. Cabral, Jr., A. Grill, C. V. Jahnes, T. J. Licata, and R. A. Roy, U.S. Patent 5,576,579, November 19, 1996; A. Grill, C. Jahnes, and C. Cabral, Jr., "Layered TaSiN as an Oxidation Resistant Electrically Conductive Barrier," J. Mater. Res. 14, 1604 (1999).
15. 3 for 1-Gbit DRAMs," Solid State Technol. 40, 235 (1997).
16. 3 Films for Gigabit DRAM Application," Mater. Res. Soc. Symp. Proc. 493, 33 (1997).
17. M. H. Frey, Z. Xu, P. Han, and D. A. Payne, "The Role of Interfaces on Apparent Grain Size Effect on the Dielectric Properties for Ferroelectric Barium Titanate Ceramics," Ferroelect. 206, 337 (1998).
18. R. Waser and M. Klee, "Undoped and Doped Perovskite Films: Sol Gel Processing and Characterization," Integr. Ferroelect. 2, 23-40 (1992).
19. T. M. Shaw, R. B. Laibowitz, J. D. Baniecki, M. Copel, P. R. Duncombe, H. Shen, and D. E. Kotecki, "The Effect of Electrode and Grain Boundary Interfaces on the Properties of Barium Strontium Titanate Thin Films," Proceedings of the U.S.-Japan Workshop on Electrically Active Interfaces, March 17, 1998, pp. 57-60.
20. 3," Appl. Phys. Lett. 70, 3227 (1997).
21. R. Waser, "Dielectric Analysis of Integrated Ceramic Thin Film Capacitors," Integr. Ferroelect. 15, 39-51 (1997).
22. 3 Thin Films Grown by Chemical Vapor Deposition," J. Appl. Phys. 82, 2497 (1997).
23. 2/Si," Proceedings of the International Symposium on the Application of Ferroelectrics, in press, 1999.
24. 3 Thin Films Prepared by Chemical Solution Deposition," presented at the Second European Meeting on Integrated Ferroelectrics, EMIF2, September 29-30, 1997.
25. C. Zhou and D. M. Newns, "Intrinsic Dead Layer Effect and the Performance of Ferroelectric Thin Film Capacitors," J. Appl. Phys. 82, 3081 (1997).
26. G. Rupprecht, R. O. Bell, and B. D. Silverman, "Nonlinearity and Microwave Losses in Cubic Strontium-Titanate," Phys. Rev. 123, 97 (1961).
27. 3 Thin Films on Pt/Si," Mater. Res. Soc. Symp. Proc. 415, 219 (1996).
28. 3 Thin Films from 1 mHz to 20 GHz," Appl. Phys. Lett. 72, 498 (1998).
29. G. W. Dietz and Rainer Waser, "How to Analyze Relaxation and Leakage Currents of Dielectric Thin Films: Simulation of Voltage-Step and Voltage-Ramp Techniques," Integr. Ferroelect. 10, 39-51 (1995).
30. A. K. Jonscher, Dielectric Relaxation in Solids, Chelsea Dielectrics Press, London, 1983.
31. 3 Thin Films," Extended Abstracts, 7th U.S.-Japan Seminar on Dielectric and Piezoelectric Ceramics, 1995, pp. 24-27.
32. 3 Thin Films," Mater. Res. Soc. Symp. Proc. 493 (Ferroelectric Thin Films VI), 27-32 (1998).
33. M. Schumacher and R. Waser, "Curie-von Schweidler Behavior Observed in Ferroelectric Thin Films and Comparison to Superparaelectric Thin Film Materials," Integr. Ferroelect. 22, 109-121 (1998).
34. 3 Thin Film Capacitors," J. Eur. Ceram. Soc. 19, No. 6-7, 1457 (1999).
35. N. E. Mott and E. A. Davis, Electronic Processes in Non-Crystalline Materials, Clarendon Press, Oxford, U.K., 1979.
36. 3 Thin Films and Their Correlation with Oxygen Vacancy Density," Jpn. J. Appl. Phys. 36, Part 2, No. 11B, L1514-L1516 (1997).
37. 3 Thin Films Over the Temperature Range 4.2 K-496 K," Ferroelectric Thin Films VII, Mater. Res. Soc. Symp. Proc., 1998, in press.
38. 3 Thin Films for Ultrahigh-Density Dynamic Random Access Memories," J. Appl. Phys. 82, 2359 (1997).
39. 3 Thin Films," Thin Solid Films 299, 53-58 (1997).
40. J. G. Simmons, "Richardson-Schottky Effect in Solids," Phys. Rev. Lett. 15, 967-968 (1965).
41. S. Zafir, R. E. Jones, B. Jiang, B. White, V. Kaushik, and S. Gillespie, "The Electronic Conduction Mechanism in Barium Strontium Titanate Thin Films," Appl. Phys. Lett. 73, 3533 (1998).
42. 3 Thin Films," Appl. Phys. Lett. 73, 1832 (1998).
43. 3 Thin Films," Thin Solid Films 305, 66 (1997).
44. R. E. Jones, Jr., P. D. Maniar, A. C. Campbell, R. Moazzami, and C. J. Mogab, "High Permittivity Lead Based Perovskite Dielectrics for DRAM Applications," Integr. Ferroelect. 5, 235 (1994).
45. 3 Thin Films," Jpn. J. Appl. Phys. 34, 27 (1995).
46. 3 Thin Film Capacitors on DRAM Operation," IEICE Trans. Electron. E80-C, 1043 (1997).
47. 3 Thin Films," Jpn. J. Appl. Phys. 34, 5425 (1995).
48. 3 Thin Films: Resistance Degradation," Mater. Res. Soc. Symp. Proc. 493, 9 (1998).
49. 3 Thin Films Under DC and Dynamic Stress Conditions," Proceedings of the 35th Annual IEEE International Reliability Physics Symposium, 1997, pp. 82-89.
50. R. Waser, T. Baiatu, and K.-H. Hardtl, "DC Electrical Degradation of Perovskite-Type Titanates: I, Ceramics," J. Amer. Ceram. Soc. 73, 1645-1653 (1990).
51. R. Waser, T. Baiatu, and K.-H. Hardtl, "DC Electrical Degradation of Perovskite-Type Titanates: II, Single Crystals," J. Amer. Ceram. Soc. 73, 1654-1662 (1990).
52. T. Baiatu, R. Waser, and K.-H. Hardtl, "DC Electrical Degradation of Perovskitc-Type Titanates: III, A Model of the Mechanism, Ceramics," J. Amer. Ceram. Soc. 73, 1663-1673 (1990).
53. 3," Ferroelect. 49, 71-74 (1983).
54. 3 Ceramics," Ferroelect. 69, 179-186 (1986).