Bias and temperature dependence of homogeneous hot-electron injection from silicon into silicon dioxide at low voltages

IEEE Transactions on Electron Devices

Volumn 44, Issue 2, 1997, Pages 288-296

  Fischer, Björn ^a,b   Ghetti, Andrea ^a,d   Selmi, Luca ^e   Bez, Roberto ^b   Sangiorgi, Enrico ^c  

^a IEEE   (Italy)

^b UNIVERSITY OF BOLOGNA   (Italy)

^c LEIBNIZ UNIVERSITY HANNOVER   (Germany)

^d STMICROELECTRONICS   (Italy)

^e UNIVERSITY OF UDINE   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRON TUNNELING; ENERGY GAP; HOT CARRIERS; MONTE CARLO METHODS; SEMICONDUCTING SILICON; TEMPERATURE;

CARRIER DISTRIBUTION; HOT CARRIER EFFECT; HOT ELECTRON INJECTION; LOW VOLTAGE; TEMPERATURE DEPENDENCE;

MOSFET DEVICES;

EID: 0031079245     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.557776     Document Type: Article

References (34)

1. B. Riccò, E. Sangiorgi, and D. Cantarelli, "Low-voltage, hot-electron effects in short-channel MOSFET's," in IEDM Tech. Dig., 1984, pp. 92-95.
2. B. Eitan, D. Frohman-Bentchkowsky, and J. Shappir, "Impact ionization at very low voltages in silicon," J. Appl. Phys., vol. 53, pp. 1244-1247, 1982.
3. M. V. Fischetti and S. E. Laux, "Monte Carlo study of sub-bandgap impact ionization in small silicon field-effect transistors," in IEDM Tech. Dig., 1995, pp. 305-308.
4. J. D. Bude and M. Mastrapasqua, "Impact ionization and distribution functions in sub-micron n-MOSFET technologies," IEEE Electron Device Lett., vol. 16, pp. 439-441, 1995.
5. A. Abramo, C. Fiegna, and F. Venturi, "Hot-carrier effects in short MOSFET's at low applied voltages," in IEDM Tech. Dig., 1995, pp. 301-304, and J. Appl. Phys., vol. 80, p. 889, July 1996.
6. S. Tam, F.-C. Hsu, C. Hu, R. S. Muller, and P. K. Ko, "Hot-electron currents in very short channel MOSFET's," IEEE Electron Device Lett., Vol. EDL4, pp. 249-251, 1983.
7. J. D. Bude, "Gate current by impact ionization feedback in sub-micron MOSFET technologies," in Symp. VLSI Tech., Tech. Dig., 1995, pp. 101-102.
8. J. D. Bude, A. Frommer, M. R. Pinto, and G. R. Weber, "EEPROM/flash sub 3.0 V drain-source bias hot-carrier writing," in IEDM Tech. Dig., 1995, pp. 989-991.
9. G. D. Mahan, "Hot electrons in one dimension," J. Appl. Phys., vol. 58, pp. 2242-2251, 1985.
10. E. Sangiorgi, F. Venturi, C. Fiegna, A. Abramo, and F. Capasso, "Non-local effects on the electron energy distribution in short devices under high field conditions," in Proc. Int. Workshop Computational Electronics, 1992, pp. 221-224.
11. A. K. Henning, N. N. Chan, J. T. Watt, and J. D. Plummer, "Substrate current at cryogenic temperatures: Measurements and a two-dimensional model for CMOS technology," IEEE Trans. Electron Devices, vol. ED34, pp. 64-74, Jan. 1987.
12. M. Koyanagi, T. Matsumoto, M. Tsuno, T. Shimatani, Y. Yoshida, and H. Watanabe, "Impact ionization phenomenon in 0.1-μm MOSFET at low temperature and low voltage," in IEDM Tech. Dig., 1993, pp. 341-344.
13. D. Esseni, L. Selmi, R. Bez, E. Sangiorgi, and B. Riccò, "Bias and temperature dependence of gate and substrate currents in n-MOSFET's at low drain voltage," in IEDM Tech. Dig., 1994, pp. 307-310.
14. N. Sano, M. Tomizawa, and A. Yoshii, "Temperature dependence of hot-carrier effects in short-channel Si-MOSFET's," IEEE Trans. Electron Devices, vol. 42, pp. 2211-2216, 1995.
15. M. Mastrapasqua and J. D. Bude, "Electron and hole impact ionization in deep sub-micron MOSFET's," Microelectron. Eng., vol. 28, pp. 293-300, 1995.
16. D. Esseni, L. Selmi, E. Sangiorgi, R. Bez, and B. Riccò, "Temperature dependence of gate and substrate currents in the CHE crossover regime," IEEE Electron Device Lett., vol. 16, pp. 506-508, 1995.
17. T. H. Ning, C. M. Osburn, and H. N. Yu, "Emission probability of hot electrons from silicon into silicon dioxide," J. Appl. Phys., vol. 48, pp. 286-293, 1977.
18. L. Selmi, E. Sangiorgi, R. Bez, and B. Riccò, "A test chip and an accurate measurement system to characterize hot hole injection in the gate oxide of p-MOSFET's," in Proc. ICMTS, 1994, vol. 7, pp. 68-71.
19. Z. Yu, D. Chen, L. So, and R. W. Dutton, PISCES-2ET User's Manual, Integrated Circuits Lab., Stanford Univ., Stanford, CA, Tech. Rep., 1994.
20. R. Bez, E. Camerlenghi, D. Cantarelli, L. Ravazzi, and G. Crisenza, "A novel method for the experimental determination of the coupling ratios in submicron EPROM and flash EPROM cells," in IEDM Tech. Dig., 1990, pp. 99-102.
21. K. Tamer San, Ç. Kaya, D. K. Y. Liu, T.-P. Ma, and P. Shah, "A new technique for determining the capacitive coupling coefficients in flash EPROM's," IEEE Electron Device Lett., vol. 13, pp. 328-331, 1992.
22. E. Takeda, H. Kume, T. Toyabe, and S. Asai, "Submicrometer MOSFET structure for minimizing hot-carrier generation," IEEE Trans. Electron Devices, vol. ED29, pp. 285-307, 1982.
23. A. Abramo, F. Venturi, E. Sangiorgi, J. M. Higman, and B. Riccò, "A numerical method to compute isotropic band models from anisotropic semiconductor band structures," IEEE Trans. Computer-Aided Design, vol. 12, pp. 1327-1336, 1993.
24. H. Shichijo, J. Tang, J. Bude, and D. Yoder, "Full band Monte Carlo program for electrons in silicon," in Monte Carlo Device Simulation: Full Band and Beyond, K. Hess, Ed. Norwell, MA: Kluwer, 1991, p. 285.
25. C. S. Yao, D. Chen, R. W. Dutton, F. Venturi, E. Sangiorgi, and A. Abramo, "An efficient impact ionization model for silicon Monte Carlo simulation," in Int. Workshop VLSI Process and Device Modeling, 1993, p. 42.
26. A. Abramo, R. Brunetti, C. Jacoboni, F. Venturi, and E. Sangiorgi, "A multiband Monte Carlo approach to Coulomb interaction for device analysis," J. Appl. Phys., vol. 76, pp. 5786-5794, 1994.
27. A. Ghetti, L. Selmi, E. Sangiorgi, A. Abramo, and F. Venturi, "A combined transport-injection model for hot-electron and hot-hole injection in the gate oxide of MOS structures," in IEDM Tech. Dig., 1994., pp. 363-366.
28. 2: An efficient Monte Carlo simulator for MOS devices," IEEE Computer-Aided Design, vol. 7, pp. 259-271, 1989.
29. Z. A. Weinberg, "On tunneling in metal-oxide-silicon structures," J. Appl. Phys., vol. 53., pp. 5052-5056, 1982.
30. 2 and Its Interfaces. New York: Pergamon, 1978.
31. M. V. Fischetti, D. J. DiMaria, S. D. Brorson, T. N. Theis, and J. R. Kirtley, "Theory of high-field electron transport in silicon dioxide," Phys. Rev. B, vol. 31, pp. 8124-8142, 1985.
32. M. V. Fischetti, S. E. Laux, and E. Crabbè, "Understanding hot-electron transport in silicon devices: Is there a short cut?," J. Appl. Phys., vol. 78, p. 1058, 1995.
33. W. Franz, "Dielektrischer durchschlag," in Handbuch der Physik, S. Flugge, Ed. Berlin, Germany: Springer, 1956, vol. XVII, p. 155.
34. C. Huang, T. Wang, C. N. Chen, M. C. Chang, and J. Fu, "Modeling hot-electron gate current in Si MOSFET's using a coupled drift-diffusion and Monte Carlo method," IEEE Trans. Electron Devices, vol. 39, pp. 2562-2568, 1992.