Coupled Monte Carlo-Drift Diffusion Analysis of Hot-Electron Effects in MOSFET's

IEEE Transactions on Electron Devices

Volumn 36, Issue 5, 1989, Pages 930-937

  Higman, Jack M ^a   Hess, Karl ^a   Hwang, Chang G ^b   Dutton, Robert W ^b  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^b STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DIFFUSION; ELECTRONS; MATHEMATICAL STATISTICS--MONTE CARLO METHODS;

HOT ELECTRON EFFECTS; IMPACT IONIZATION; MONTE CARLO SIMULATION;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0024663115     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.299675     Document Type: Article

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