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Volumn 62, Issue 25, 1993, Pages 3339-3341

Impact ionization in silicon

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Indexed keywords

EID: 36449005145 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.109064 Document Type: Article

Times cited : (138)

References (29)

3
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- Bude, J.¹ Hess, K.² Iafrate, G.J.³

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- This model has been recently improved by., 619
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- Tang, J.Y.¹ Hess, K.²

8
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- (1988) Phys. Rev. B , vol.38 , pp. 9721
- Fischetti, M.V.¹ Laux, S.E.²

9
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- (1991) J. Appl. Phys. , vol.70 , pp. 1493
- Vogelsang, T.¹ Hänsch, W.²

11
- 0008744322
- (1991) Phys. Rev. B , vol.44 , pp. 10689
- Cartier, E.¹ McFeely, F.R.²

16
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- (1966) Appl. Phys. Lett. , vol.9 , pp. 242
- Crowell, C.R.¹ Sze, S.M.²

24
- 84955428675
- This multicomponent Keldysh-type expression has been chosen for convenience in the fitting procedure. While Eq. (1) represents quantitatively an ionization rate consistent with the data, other equally consistent mathematical expressions may be found. Notice also that we derive this expression from zero-field experiments (XPS and quantum yield) and apply it unmodified to the simulation of high-field experiments (ionization coefficient), thus ignoring intracollisional-field effects. In Ref. 3 these effects have been shown to be significant near threshold, but to amount to small corrections at the energies at which ionization events occur, i.e., significantly above the kinematic threshold, as discussed by Bude and Hess in Ref. 25

27
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- 2267.See also
- (1972) Phys. Rev. B , vol.5
- Anderson, C.L.¹ Crowell, C.R.²

28
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- 3554 for a critique of this work and a discussion of the ionization thresholds
- (1992) J. Appl. Phys. , vol.72
- Bude, J.¹ Hess, K.²

29
- 33744685518
- (1976) Phys. Rev. B , vol.14 , pp. 556
- Chelikowsky, J.R.¹ Cohen, M.L.²

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