-
1
-
-
84944483089
-
Theory of flow electrons and holes in Germanium and other semiconductors
-
W. V. Van Roosbroeck, “Theory of flow electrons and holes in Germanium and other semiconductors”, Bell Syst. Tech. J., vol. 29, pp. 560-607, 1950.
-
(1950)
Bell Syst. Tech. J.
, vol.29
, pp. 560-607
-
-
Van Roosbroeck, W.V.1
-
3
-
-
0021587240
-
Process and device modelling for VLSI
-
“Process and device modelling for VLSI”, Microelectron. Rel., vol. 24, pp. 225-257, 1984.
-
(1984)
Microelectron. Rel.
, vol.24
, pp. 225-257
-
-
-
4
-
-
0014705867
-
Transport equations for electrons in two-valley semiconductors
-
K. Blotekjaer, “Transport equations for electrons in two-valley semiconductors”, IEEE Trans. Electron Devices, vol. ED-17, pp. 38-47, 1970.
-
(1970)
IEEE Trans. Electron Devices
, vol.ED-17
, pp. 38-47
-
-
Blotekjaer, K.1
-
5
-
-
0020141359
-
Two-dimensional numerical simulation of energy transport in Si and GaAs MESFET's
-
R. K. Cook and J. Frey, “Two-dimensional numerical simulation of energy transport in Si and GaAs MESFET's”, IEEE Trans. Electron Devices, vol. ED-29, pp. 970-977, 1982.
-
(1982)
IEEE Trans. Electron Devices
, vol.ED-29
, pp. 970-977
-
-
Cook, R.K.1
Frey, J.2
-
6
-
-
0021640292
-
Two-dimensional MOSFET simulation with energy transport phenomena
-
M. Fukuma and R. H. Uebbing, “Two-dimensional MOSFET simulation with energy transport phenomena”, in IEDM Tech. Dig., pp. 621-624, 1984.
-
(1984)
IEDM Tech. Dig.
, pp. 621-624
-
-
Fukuma, M.1
Uebbing, R.H.2
-
7
-
-
30444457881
-
Monte Carlo calculation of hot-electron problems
-
T. Kurosawa, “Monte Carlo calculation of hot-electron problems”, in Proc. Int. Conf. Physics of Semiconductors, J. Phys. Soc. Jpn., Suppl. 21, pp. 424-426, 1966.
-
(1966)
Proc. Int. Conf. Physics of Semiconductors, J. Phys. Soc. Jpn.
, Issue.21
, pp. 424-426
-
-
Kurosawa, T.1
-
8
-
-
0014846935
-
Monte Carlo determination of electron transport properties in Gallium Arsenide
-
W. Fawcett, A. B. Boardman, and S. Swain, “Monte Carlo determination of electron transport properties in Gallium Arsenide”, J. Phys. Chem. Solids, vol. 31, pp. 1963-1990, 1970.
-
(1970)
J. Phys. Chem. Solids
, vol.31
, pp. 1963-1990
-
-
Fawcett, W.1
Boardman, A.B.2
Swain, S.3
-
9
-
-
0018977060
-
Diffusion and the power spectral density and correlation function of velocity fluctuations for electrons in Si and GaAs by Monte Carlo methods
-
R. Fauquembergue, J. Zimmerman, A. Kaszynski, and E. Constant, “Diffusion and the power spectral density and correlation function of velocity fluctuations for electrons in Si and GaAs by Monte Carlo methods”, J. Appl. Phys., vol. 51, pp. 1065-1071, 1980.
-
(1980)
J. Appl. Phys.
, vol.51
, pp. 1065-1071
-
-
Fauquembergue, R.1
Zimmerman, J.2
Kaszynski, A.3
Constant, E.4
-
10
-
-
0020151880
-
Monte Carlo simulation of space-charge injection FET
-
R. Fauquembergue, M. Pernisek, and E. Constant, “Monte Carlo simulation of space-charge injection FET”, Electron. Lett., vol. 18, pp. 670-671, 1982.
-
(1982)
Electron. Lett.
, vol.18
, pp. 670-671
-
-
Fauquembergue, R.1
Pernisek, M.2
Constant, E.3
-
11
-
-
0020166703
-
Monte Carlo simulation of submicron GaAs n + -i (n)-n+ diode
-
K. Tomizawa, Y. Awano, N. Hashizume, and M. Kawashima, “Monte Carlo simulation of submicron GaAs n + -i (n)-n+ diode”, Proc. Inst. Elect. Eng., -I: Solid State and Electron Devices, vol. 129, pp. 131-136, 1982.
-
(1982)
Proc. Inst. Elect. Eng., -I: Solid State and Electron Devices
, vol.129
, pp. 131-136
-
-
Tomizawa, K.1
Awano, Y.2
Hashizume, N.3
Kawashima, M.4
-
12
-
-
35949025517
-
The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials
-
C. Jacoboni and L. Reggiani, “The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials”, Rev. Mod. Phys., vol. 55, pp. 645-705, 1983.
-
(1983)
Rev. Mod. Phys.
, vol.55
, pp. 645-705
-
-
Jacoboni, C.1
Reggiani, L.2
-
14
-
-
0022704431
-
A self-consistent Monte Carlo particle model to analyze semiconductor microcomponents of any geometry
-
C. Moglestue, “A self-consistent Monte Carlo particle model to analyze semiconductor microcomponents of any geometry”, IEEE Trans. Computer-Aided Design, vol. CAD-5, pp. 326-345, 1986.
-
(1986)
IEEE Trans. Computer-Aided Design
, vol.CAD-5
, pp. 326-345
-
-
Moglestue, C.1
-
15
-
-
0000473942
-
Calculation of steady state distribution functions by exploiting stability
-
H. D. Rees, “Calculation of steady state distribution functions by exploiting stability”, Phys. Lett. A, vol. 26, p. 416, 1968.
-
(1968)
Phys. Lett. A
, vol.26
, pp. 416
-
-
Rees, H.D.1
-
16
-
-
0001269324
-
Calculation of distribution functions by exploiting the stability of the steady state
-
H. D. Rees. “Calculation of distribution functions by exploiting the stability of the steady state”, J. Phys. Chem. Solids, vol. 30, pp. 643-655, 1969.
-
(1969)
J. Phys. Chem. Solids
, vol.30
, pp. 643-655
-
-
Rees, H.D.1
-
17
-
-
84911816788
-
The syncronus ensemble theory of hot electrons
-
S. M. Ryvkin (Nauka, Leningrad)
-
P. J. Price, “The syncronus ensemble theory of hot electrons”, in Proc. 9th Int. Conf. on the Physics of Semiconductors, S. M. Ryvkin (Nauka, Leningrad), pp. 753-757, 1968.
-
(1968)
Proc. 9th Int. Conf. on the Physics of Semiconductors
, pp. 753-757
-
-
Price, P.J.1
-
19
-
-
0022045553
-
Boundary conditions in regional Monte Carlo device analysis
-
P. T. Nguyen, D. H. Navon, and T.-W. Tang, “Boundary conditions in regional Monte Carlo device analysis”, IEEE Trans. Electron Devices, vol. ED-32, pp. 783-787, 1985.
-
(1985)
IEEE Trans. Electron Devices
, vol.ED-32
, pp. 783-787
-
-
Nguyen, P.T.1
Navon, D.H.2
Tang, T.W.3
-
20
-
-
0018457253
-
1 μm MOSFET VLSI technology: Part. IV-hot-electron design constraints
-
T. H. Ning, P. W. Cook, R. H. Dennard, C. M. Osburn, S. E. Sinister, and N. H. Yu, “1 μm MOSFET VLSI technology: Part. IV-hot-electron design constraints”, IEEE Trans. Electron Devices, vol. ED-26, pp. 346-353, 1979.
-
(1979)
IEEE Trans. Electron Devices
, vol.ED-26
, pp. 346-353
-
-
Ning, T.H.1
Cook, P.W.2
Dennard, R.H.3
Osburn, C.M.4
Sinister, S.E.5
Yu, N.H.6
-
21
-
-
0004461440
-
Monte Carlo calculations of hot electron energy tails
-
A. Phillips and P. J. Price, “Monte Carlo calculations of hot electron energy tails”, Appl. Phys. Lett., vol. 30, pp. 528-530, 1977.
-
(1977)
Appl. Phys. Lett.
, vol.30
, pp. 528-530
-
-
Phillips, A.1
Price, P.J.2
-
22
-
-
0020826266
-
Impact ionization of hot electrons in silicon (steady state)
-
J. Tang and K. Hess, “Impact ionization of hot electrons in silicon (steady state)”, J. Appl. Phys., vol. 54, pp. 5139-5144, 1983.
-
(1983)
J. Appl. Phys.
, vol.54
, pp. 5139-5144
-
-
Tang, J.1
Hess, K.2
-
23
-
-
0000642431
-
Scattering by ionized impurities in semiconductors
-
H. Brooks and C. Herring, “Scattering by ionized impurities in semiconductors”, Phys. Rev., vol. 83, p. 879, 1951.
-
(1951)
Phys. Rev.
, vol.83
, pp. 879
-
-
Brooks, H.1
Herring, C.2
-
24
-
-
0020180768
-
Monte Carlo surface scattering simulation in MOSFET structures
-
Y. Park, T. Tang, and D. H. Navon, “Monte Carlo surface scattering simulation in MOSFET structures”, IEEE Trans. Electron Devices, vol. ED-30, pp. 1110-1116, 1983.
-
(1983)
IEEE Trans. Electron Devices
, vol.ED-30
, pp. 1110-1116
-
-
Park, Y.1
Tang, T.2
Navon, D.H.3
-
25
-
-
0022112634
-
Monte Carlo study of two dimensional electron gas transport in Si-MOS devices
-
C. Hao, J. Zimmermann, M. Charef, R. Fauquembergue, and E. Constant, “Monte Carlo study of two dimensional electron gas transport in Si-MOS devices”, Solid-State Electronics, vol. 28, pp. 733-740, 1985.
-
(1985)
Solid-State Electronics
, vol.28
, pp. 733-740
-
-
Hao, C.1
Zimmermann, J.2
Charef, M.3
Fauquembergue, R.4
Constant, E.5
-
26
-
-
0020717155
-
High-field drift velocity of electrons at the Si-SiO2 interface as determined by a time-of-flight technique
-
J. A. Cooper Jr. and D. F. Nelson, “High-field drift velocity of electrons at the Si-SiO2 interface as determined by a time-of-flight technique”, J. Appl. Phys., vol. 54, pp. 1445-1456, 1983.
-
(1983)
J. Appl. Phys.
, vol.54
, pp. 1445-1456
-
-
Cooper, J.A.1
Nelson, D.F.2
-
27
-
-
84907859764
-
A Monte Carlo approach to the study of the drift-diffusion transport model
-
Sept.
-
C. Mantilli, F. Venturi, B. Riccó, and E. Sangiorgi, “A Monte Carlo approach to the study of the drift-diffusion transport model”, in ESSDERC Tech. Dig., Sept. 1987.
-
(1987)
ESSDERC Tech. Dig.
-
-
Mantilli, C.1
Venturi, F.2
Riccó, B.3
Sangiorgi, E.4
-
28
-
-
0017449653
-
Emission probability of hot electrons from silicon into silicon dioxide
-
T. H. Ning, C. M. Osburn, and H. N. Yu, “Emission probability of hot electrons from silicon into silicon dioxide”, J. Appl. Phys., vol. 48, pp. 286-293, 1977.
-
(1977)
J. Appl. Phys.
, vol.48
, pp. 286-293
-
-
Ning, T.H.1
Osburn, C.M.2
Yu, H.N.3
-
29
-
-
0022291252
-
A submicron nMOS technology suitable for low power high speed circuits
-
W. Fichtner, E. A. Hofstatter, R. K. Watts, R. J. Bayruns, P. F. Betchtold, R. L. Johnston, and D. M. Boulin, “A submicron nMOS technology suitable for low power high speed circuits”, in IEDM Tech. Dig., pp. 264-267, 1985.
-
(1985)
IEDM Tech. Dig.
, pp. 264-267
-
-
Fichtner, W.1
Hofstatter, E.A.2
Watts, R.K.3
Bayruns, R.J.4
Betchtold, P.F.5
Johnston, R.L.6
Boulin, D.M.7
-
30
-
-
0022670521
-
Scaling issues related to high field phenomena in submicron MOSFETs
-
E. Sangiorgi, E. A. Hofstatter, R. K. Smith, P. F. Betchtold, and W. Fichtner, “Scaling issues related to high field phenomena in submicron MOSFETs”, IEEE Electron Device Lett., vol. EDL-7, p. 115118, 1986.
-
(1986)
IEEE Electron Device Lett.
, vol.EDL-7
, pp. 115118
-
-
Sangiorgi, E.1
Hofstatter, E.A.2
Smith, R.K.3
Betchtold, P.F.4
Fichtner, W.5
|