Full-band Monte Carlo simulation of a 0.12 μm-Si-PMOSFET with and without a strained SiGe-channel

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1998, Pages 897-900

  Jungemann, C ^a   Keith, S ^a   Meinerzhagen, B ^a  

^a UNIVERSITY OF BREMEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GATES (TRANSISTOR); MONTE CARLO METHODS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES;

FULL BAND MONTE CARLO (FBMC) SIMULATION;

MOSFET DEVICES;

EID: 0032276833     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)