Comprehensive SiGe Monte Carlo model for transient 2D simulations of HBTs

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1997, Pages 881-884

  Graf, P ^a   Bufler, F M ^a   Meinerzhagen, B ^a   Jungemann, C ^a  

^a UNIVERSITY OF BREMEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DRIFT DIFFUSION (DD) MODELS; PARTICLE MESH COUPLING METHOD;

APPROXIMATION THEORY; COMPUTER SIMULATION; DIFFUSION IN SOLIDS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRON TRANSPORT PROPERTIES; MONTE CARLO METHODS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 4243495168     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (15)