On the Universality of Inversion Layer Mobility in Si MOSFET’s: Part I—Effects of Substrate Impurity Concentration

IEEE Transactions on Electron Devices

Volumn 41, Issue 12, 1994, Pages 2357-2362

  Toriumi, Akira ^b   Iwase, Masao ^b   Tango, Hiroyuki ^b  

^a STANFORD UNIVERSITY   (United States)

^b TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRON TRANSPORT PROPERTIES; IMPURITIES; INTERFACES (MATERIALS); SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SUBSTRATES; SURFACE PROPERTIES; THERMAL EFFECTS;

FOWLER NORDHEIM ELECTRON INJECTION; INVERSION LAYER MOBILITY; SUBSTRATE IMPURITY CONCENTRATION; UNIVERSALITY;

MOSFET DEVICES;

EID: 0028747841     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.337449     Document Type: Article

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