Consistent hydrodynamic and Monte-Carlo simulationof SiGe HBTs based on table models for the relaxation times

VLSI Design

Volumn 8, Issue 1-4, 1998, Pages 387-391

  Neinhus B ^a,b   Decker, S ^a,b   Graf, P ^a,b   Bufler, F M ^a,b,c   Meinerzhagen, B ^a,b,d,e  

^a UNIVERSITY OF BREMEN   (Germany)

^b RWTH AACHEN UNIVERSITY   (Germany)

^c UNIV GRENOBLE ALPES   (France)

^d LUCENT TECHNOLOGIES   (United States)

^e Université de Grenoble I ^*

Author keywords

GHDM; Hetereo Bipolar Transistor (HBT); Hydrodynamics; Monte Carlo; Silicon Germanium (SiGe); Spline model; Transport parameter

Indexed keywords

CHARGE CARRIERS; COMPUTER SIMULATION; CRYSTAL LATTICES; ELECTRON TRANSPORT PROPERTIES; HYDRODYNAMICS; MONTE CARLO METHODS; RELAXATION PROCESSES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING;

SPLINE MODEL;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0032307773     PISSN: 1065514X     EISSN: None     Source Type: Journal    
DOI: 10.1155/1998/49783     Document Type: Article

References (5)

1. x alloys", IEEE Trans. Semicond. Technol. Modeling and Simulation, 1.
2. Müllges, G. E. and Reutter, F. (1993). Numerik-Algorithmen mit ANSI-C Programmen, BI-Wissenschaftsverlag, Mannheim, 2nd edition.
3. Thoma, R., Emunds, A., Meinerzhagen, B., Peifer, H. J. and Engl, W. L. (1991). "Hydrodynamic equations for semiconductors with nonparabolic bandstructures", IEEE Trans. Electron Devices, 38, 1343-1352.
4. Bork, I., Jungemann, C., Meinerzhagen, B. and Engl, W. L. (1994). "Influence of heat flux on the accuarcy of hydrodynamic models for ultrashort Si MOSFETs", in NUPAD Tech. Dig., Honolulu, 5.
5. To be published at ESSDERC 97.