Effects of band structure and phonon models on hot electron transport in silicon

Electrical Engineering

Volumn 79, Issue 2, 1996, Pages 99-101

  Jungemann, Chr ^a   Keith, S ^b   Bufler, F M ^b   Meinerzhagen, B ^b  

^a FUJITSU LABORATORIES LTD   (Japan)

^b UNIVERSITY OF BREMEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0038167951     PISSN: 09487921     EISSN: None     Source Type: Journal    
DOI: 10.1007/bf01232918     Document Type: Article

References (9)

1. Abramo, A. et al.: A Comparison of Numerical Solutions of the Boltzmann Transport Equation for High-Energy Electron Transport Silicon. IEEE Trans. Electron Devices 41 (1994) 1646-1654
2. Cartier, E.; Fischetti, M. V.; Eklund, A.; McFeely, F. R.: Impact ionization in silicon. Appl. Phys. Lett. 62 (1992) 3339-3341
3. Hihman, J. M.: JWCE 94 (1994) 7
4. Chelykowski, J. R.; Cohen, M. L.: Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zinc-blende semiconductors. Phys. Rev. B 14 (1976) 556
5. Jacoboni, C.; Reggiani, L.: The Monte Carlo method for the solution of charge transport in semiconductors with application to covalent materials. Rev. Mod. Phys. 55 (1983) 645
6. Thoma, R.; Peifer, H.-J.; Engl, W. L.; Quade W.; Brunetti, R.; Jacoboni, C.: An Improved Impact-Ionization Model for High-Energy Electron Transport in Si with Monte Carlo Simulation. J. Appl. Phys. bf 69 (1991) 2300
7. DiMaria, D. J.; Theis, T. N.; Kirtley, J. R.; Pesavento, F. L.; Dong, D. W.: Electron heating in silicon dioxide and off-stoichiometric silicon dioxide films. J. Appl. Phys. 57 (1985) 1214
8. van Overstraeten, R.; de Man, H.: Measurement of the ionization rates in diffused silicon p-n junctions. Solid-State Electron. 13 (1970) 583
9. Peifer, H.-J.; Meinerzhagen, B.; Thoma, R.; Engl, W. L.; Evaluation of impact ionization modeling in the framework of hydrodynamic equations. IEDM Tech. Dig. (1991) 131