On the accuracy and efficiency of substrate current calculations for Sub-μm n-MOSFET's

IEEE Electron Device Letters

Volumn 17, Issue 10, 1996, Pages 464-466

  Jungemann, C ^a   Yamaguchi, S ^a,b   Goto, H ^a,b  

^a FUJITSU LABORATORIES LTD   (Japan)

^b IEEE

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRIC FIELDS; IONIZATION; MATHEMATICAL MODELS; MONTE CARLO METHODS; SUBSTRATES;

IMPACT IONIZATION; LUCKY ELECTRON MODEL;

MOSFET DEVICES;

EID: 0030269580     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.537076     Document Type: Article

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