A Comparison of Numerical Solutions of the Boltzmann Transport Equation for High-Energy Electron Transport Silicon

IEEE Transactions on Electron Devices

Volumn 41, Issue 9, 1994, Pages 1646-1654

  Vogelsang, Thomas ^s   Tomizawa, Masaaki ^p   Yoshii, Akira ^p   Taniguchi, Kenji ^j   Thobel, J L ^b  

^a UNIVERSITY OF BOLOGNA   (Italy)

^b CNRS   (France)

^c UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^d UNIV PARIS SUD   (France)

^e STANFORD UNIVERSITY   (United States)

^f RWTH AACHEN UNIVERSITY   (Germany)

^g IBM T J WATSON RESEARCH CENTER   (United States)

^h UNIVERSITY OF MARYLAND   (United States)

ⁱ INSTITUTE FOR MICROELECTRONICS   (Austria)

^j OSAKA UNIVERSITY   (Japan)

^k UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^l NEC CORPORATION   (Japan)

^m MITSUBISHI ELECTRIC CORPORATION   (Japan)

ⁿ UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^o UNIVERSITY OF MASSACHUSETTS   (United States)

^p NTT CORPORATION   (Japan)

^q SHARP CORPORATION   (Japan)

^r MEIJI UNIVERSITY   (Japan)

^s SIEMENS AG   (Germany)

more..

Author keywords

[No Author keywords available]

Indexed keywords

ALGORITHMS; COMPUTATIONAL METHODS; COMPUTER SIMULATION; ELECTRON TRANSPORT PROPERTIES; ELECTRONS; MONTE CARLO METHODS; NUMERICAL METHODS;

BOLTZMANN TRANSPORT EQUATION; COMPUTER CODES; ELECTRON ENERGY; HIGH ENERGY ELECTRON TRANSPORT SILICON; MONTE CARLO PARTICLE TECHNIQUE;

SEMICONDUCTING SILICON;

EID: 0028513865     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.310119     Document Type: Article

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