Full band Monte-Carlo device simulation of an 0.1μm N-channel MOSFET in strained silicon material

European Solid-State Device Research Conference

Volumn , Issue , 1997, Pages 200-203

  Keith, S ^a   Bufler, F M ^a   Meinerzhagen, B ^a  

^a UNIVERSITY OF BREMEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM; MONTE CARLO METHODS;

DEVICE SIMULATIONS; FULL BAND; FULL-BAND MONTE CARLO; N-CHANNEL; NMOS TRANSISTORS; STRAINED SILICON; STRAINED-SI; SURFACE CHANNEL;

SILICON;

EID: 84907523528     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.1997.194400     Document Type: Conference Paper

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