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Volumn 48, Issue 19, 1993, Pages 14276-14287

Electronic-band parameters in strained Si1-xGex alloys on Si1-yGey substrates

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Indexed keywords


EID: 30344472859     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.48.14276     Document Type: Article
Times cited : (597)

References (59)
  • 3
    • 84931557567 scopus 로고    scopus 로고
    • G. Abstreiter, J. Brunner, F. Meier, U. Menczigar, J. Nützel, R. Schorer, and D. Többen, Proceedings of the 21st International Conference on the Physics of Semiconductors, edited by Ping Jiang and Hou-Zhi Zheng (World Scientific, Singapore, 1992), Vol. 1, p. 827.
  • 39
    • 84931557566 scopus 로고    scopus 로고
    • O. Madelung, in Tables Numerical Data and Functional Relationships in Science and Technology, edited by O. Madelung, M. Schulz, and H. Weiss, Landolt-Börnstein, New Series, Group III, Vol. 17, Pt. a (Springer, Heidelberg, 1982).
  • 45
    • 84931557516 scopus 로고    scopus 로고
    • L, M, and N were calculated from the data given for γ1, γ2, and γ3 in Ref. 37.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.