A model of impact ionization due to the primary hole in silicon for a full band Monte Carlo simulation

Journal of Applied Physics

Volumn 79, Issue 10, 1996, Pages 7718-7725

  Kunikiyo, Tatsuya ^a   Takenaka, Masahiro ^b   Morifuji, Masato ^c   Taniguchi, Kenji ^c   Hamaguchi, Chihiro ^c  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

^b SHARP CORPORATION   (Japan)

^c OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0007614213     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.362375     Document Type: Article

References (21)

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13. See, for example, J. Bude, in Monte Carlo Device Simulation: Full Band and Beyond, edited by K. Hess (Kluwer, Dordrecht, 1991), p. 49.
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16. The formulas of Eqs. (21) and (22) shown in Ref. 6 are misprinted. The formulae of Eqs. (2.14) and (2.15) shown in the present article are correct. Of course, we calculated the impact-ionization rate due to primary electrons using the correct formulas in Ref. 6.
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21. Another point to note in a Monte Carlo simulation is mesh generation over the first Brillouin zone. As shown in Fig. 1, the heavy-hole band around the Γ point is strongly warped. Hole transport in the heavy-hole band is dominant since the density of states due to the heavy-hole band is much larger than that due to the other valence bands. Therefore, at least, the mesh spacing less than 0.01 in units of 2π/a, where a is the lattice, is necessary to describe the first Brillouin zone properly.