Nanometer-scale characterization of SiO2/Si with a scanning capacitance microscope

Applied Physics Letters

Volumn 69, Issue 26, 1996, Pages 4050-4052

  Tomiye, Hideto ^a   Yao, Takafumi ^a   Kawami, Hiroshi ^b   Hayashi, Tsukasa ^b  

^a TOHOKU UNIVERSITY   (Japan)

^b NISSIN ELECTRIC CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001576878     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117867     Document Type: Article

References (8)

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