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Volumn 15, Issue 4, 1997, Pages 1011-1014

Quantitative measurement of two-dimensional dopant profile by cross-sectional scanning capacitance microscopy

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0001505352     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589385     Document Type: Article
Times cited : (39)

References (15)
  • 1
    • 0003552056 scopus 로고    scopus 로고
    • published by the Semiconductor Industry Association, 4300 Stevens Creek Boulevard, Suite 271, San Jose, CA 95129
    • The National Technology Roadmap for Semiconductors is published by the Semiconductor Industry Association, 4300 Stevens Creek Boulevard, Suite 271, San Jose, CA 95129.
    • The National Technology Roadmap for Semiconductors
  • 2
    • 5844261769 scopus 로고
    • edited by S. Selberherr, H. Stippel, and E. Strasser Springer, Berlin
    • M. E. Law, Simulations of Semiconductor Devices and Processes, edited by S. Selberherr, H. Stippel, and E. Strasser (Springer, Berlin, 1992), Vol. 5, p. 1.
    • (1992) Simulations of Semiconductor Devices and Processes , vol.5 , pp. 1
    • Law, M.E.1
  • 13
    • 5844253901 scopus 로고    scopus 로고
    • Digital Instruments, Santa Barbara CA (private communications)
    • A. Erickson, Digital Instruments, Santa Barbara CA (private communications).
    • Erickson, A.1
  • 14
    • 5844266239 scopus 로고
    • Ph. D. thesis, Physics Dept., University of Utah
    • Y. Huang, Ph. D. thesis, Physics Dept., University of Utah, 1995.
    • (1995)
    • Huang, Y.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.