Quantitative scanning capacitance microscopy analysis of two-dimensional dopant concentrations at nanoscale dimensions

Journal of Electronic Materials

Volumn 25, Issue 2, 1996, Pages 301-304

  Erickson, A ^a,d   Sadwick, L ^a   Neubauer, G ^b   Kopanski, J ^c   Adderton, D ^d   Rogers, M ^d  

^a University of Utah   (United States)

^b INTEL CORPORATION   (United States)

^c NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^d Digital Instruments   (United States)

Author keywords

Atomic force microscopy; Capacitance voltage theory; Scanning capacitance microscopy; Two dimensional dopant profiles

Indexed keywords

EID: 0001217427     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02666260     Document Type: Article

References (10)

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