Junction delineation of 0.15 μm MOS devices using scanning capacitance microscopy

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1997, Pages 691-694

  Kleiman, R N ^a   O'Malley, M L ^a   Baumann, F H ^a   Garno, J P ^a   Timp, G L ^a  

^a NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SCANNING CAPACITANCE MICROSCOPY (SCM);

CAPACITANCE; MICROSCOPIC EXAMINATION; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS;

MOS DEVICES;

EID: 84886448061     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)