Scanning capacitance microscopy measurements and modeling: Progress towards dopant profiling of silicon

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 1, 1996, Pages 242-247

  Kopanski, J J ^a   Marchiando, J F ^a   Lowney, J R ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001223938     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.588455     Document Type: Article

References (12)

1. The National Technology Roadmap for Semiconductors is published by the Semiconductor Industry Association, 4300 Stevens Creek Boulevard, Suite 271, San Jose, CA 95129.
2. A. C. Diebold, M. Kump, J. J. Kopanski, and D. G. Seiler, Electrochem. Soc. Proc. 94-33, 78 (1994).
3. R. C. Barrett and C. F. Quate, Ultramicroscopy 42-44, 262 (1992).
4. C. C. Williams, W. P. Hough, and S. A. Rishton, Appl. Phys. Lett. 55, 203 (1989).
5. Y. Huang and C. C. Williams, J. Vac. Sci. Technol. B 12, 369 (1994).
6. J. K. Clemens, RCA Rev. 39, 33 (1978).
7. R. C. Palmer, E. J. Denlinger, and H. Kawamoto, RCA Rev. 43, 194 (1982).
8. C. C. Williams, J. Slinkman, W. P. Hough, and M. K. Wickramasinghe, Appl. Phys. Lett. 55, 1662 (1989).
9. E. H. Nicollian and J. R. Brews, MOS Physics and Technology (Wiley, New York, 1982).
10. J. F. Marchiando, Int. J. Numer. Methods Eng. (to be published).
11. Y. Huang, C. C. Williams, and J. Slinkman, Appl. Phys. Lett. 66, 344 (1995).
12. G. Neubauer, A. Erickson, C. C. Williams, J. J. Kopanski, M. Rodgers, and D. Adderton, J. Vac. Sci. Technol. B 14, 426 (1996).