Two-step dopant diffusion study performed in two dimensions by scanning capacitance microscopy and TSUPREM IV

Journal of Applied Physics

Volumn 84, Issue 3, 1998, Pages 1305-1309

  Kim, J ^a   McMurray, J S ^a   Williams, C C ^a   Slinkman, J ^b  

^a UNIVERSITY OF UTAH   (United States)

^b IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0011406973     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.368245     Document Type: Article

References (15)

1. The National Technology Roadmap for Semiconductors (Semiconductor Industry Association, San Jose, CA, 1994).
2. A. C. Diebold, M. R. Kump, J. J. Kopanski, and D. G. Seiler, J. Vac. Sci. Technol. B 14, 196 (1996).
3. Y. Huang, C. C. Williams, and J. Slinkman, Appl. Phys. Lett. 66, 344 (1995).
4. Y. Huang, C. C. Williams, and H. Smith, J. Vac. Sci. Technol. B 14, 433 (1996).
5. Y. Huang, C. C. Williams, and M. A. Wendman, J. Vac. Sci. Technol. B 14, 1168 (1996).
6. G. Neubauer, A. Erickson, and D. Adderton, J. Vac. Sci. Technol. B 14, 426 (1996).
7. J. S. McMurray, J. Kim, and C. C. Williams, J. Vac. Sci. Technol. B 15, 1011 (1997).
8. J. S. McMurray, J. Kim, C. C. Williams, and J. Slinkman, J. Vac. Sci. Technol. B 16, 344 (1998).
9. R. C. Palmer, E. J. Denlinger, and H. Kawamoto, RCA Rev. 43, 194 (1982).
10. C. C. Williams, J. Slinkman, W. P. Hough, and H. K. Wickramasinghe, Appl. Phys. Lett. 55, 1662 (1989).
11. J. J. Kopanski, J. F. Marchiando, and J. R. Lowney, J. Vac. Sci. Technol. B 14, 242 (1996).
12. K. L. Westra, A. W. Mitchell, and D. J. Thompson, J. Appl. Phys. 74, 3608 (1993).
13. TSUPREM4 User's Manual (Technology Modeling Associates, Palo Alto, CA, 1996).
14. For more discussions on the difficulties of calibrating process simulators and practical approaches to overcoming the difficulties, see S. S. Yu, H. W. Kennel, M. D. Giles, and P. P. Packan, Tech. Dig. Int. Electron Devices Meet., p. 509 (1988); Also G. Le Carval, P. Schleiblin, D. Poncet, and P. Rivakin, Proceedings of the 1997 International Conference on Simulation of Semiconductor Processes and Devices, Cambridge, MA, 1997, p. 177.
15. For more discussions on the difficulties of calibrating process simulators and practical approaches to overcoming the difficulties, see S. S. Yu, H. W. Kennel, M. D. Giles, and P. P. Packan, Tech. Dig. Int. Electron Devices Meet., p. 509 (1988); Also G. Le Carval, P. Schleiblin, D. Poncet, and P. Rivakin, Proceedings of the 1997 International Conference on Simulation of Semiconductor Processes and Devices, Cambridge, MA, 1997, p. 177.