Modelling and simulation of reliability for design

Microelectronic Engineering

Volumn 49, Issue 1, 1999, Pages 95-117

  Mathewson, A ^a   O'Sullivan, P ^a   Concannon, A ^a   Foley, S ^a   Minehane, S ^a   Duane, R ^a   Palser, K ^a  

^a UNIVERSITY COLLEGE CORK   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; COMPUTER SOFTWARE; ELECTROMIGRATION; MATHEMATICAL MODELS; RELIABILITY; STRESSES;

STRESS MIGRATION SIMULATION;

MICROELECTRONICS;

EID: 0033225113     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00432-3     Document Type: Article

References (107)

1. "Technology CAD at intel", J. Mar, Workshop on Technology CAD Systems, 1993, p 63-74.
2. "Integration of lithography and etch", Z. Krivokapic, W.D Heavlin and D.S. Bang, Proceedings of SISPAD, p8-11, 1998
3. "Circuit sensitivity in terms of process parameters", M.J. van Dort and D. Klaassen, Proceedings of IEDM, p. 941-944, 1995.
4. "Effects of statistical dopant fluctuations on MOS device performance", P.A. Stolk and D.B.M. Klaassen, IEDM 1996, p. 627-630.
5. "A new simulation model for plasma ashing induced oxide degradation in MOSFET", Kuo-Feng You, Ming-Chien Chang, and Ching-Yuan Wu, IEEE Transactions on Electron Devices, Vol. 45 No.1, p. 239-246, 1998
6. "Correlation between substrate and gate currents in MOSFETs", S. Tam, P.K. Ko, C. Hu and R. Muller, IEEE Electron Device Letters, Vol 29, no. 11, p. 1740-1744, 1982.
7. "Lucky electron model of channel hot electron emission", C. Hu, in IEDM 1979, p. 22-25
8. "Hot-electron and hole emission effects in short n-channel MOSFETs", K. Hofmann, C. Werner, W. Weber and G. Dorda, IEEE Transactions on Electron Devices, Vol 32, No. 3, p. 691-699
9. "Hot-electron and hole emmision effects in short n-channel MOSFETs", K. Hofmann, C. Werner, W. Weber and G. Dorda, IEEE Transactions on Electron Devices, Vol 32, No. 3, p. 691-699
10. "Hot-electron and hole emmision effects in short n-channel MOSFETs", K. Hofmann, C. Werner, W. Weber and G. Dorda, IEEE Transactions on Electron Devices, Vol 32, No. 3, p. 691-699
11. "Numerical simulation of avalanche hot-carrier injection in short-channel MOSFETs", Y. Chen and T. Tang, IEEE Transactions on Electron Devices, Vol 35, No. 12, p. 2180-2188, 1988
12. "Non-local oxide injection models", K.P. Traar and A. von Schwerin, Proc. SISDEP p. 61-64, 1993.
13. "Simulation of EPROM device programming using the hydrodynamic model", S. Keeney, A. Mathewson, L. Ravazzi and C. Lombardi, Proceedings of ESSDERC, p. 261-264, 1992
14. "Carrier temperature dependent gate current modeling for EEPROM simulation", J.G. Rollins, V. Axelrad and S.J. Motzny, Microelectronic Engineering, Vol. 19, p. 265-268, 1992
15. "Transient simulation of EPROM writing characteristics with a novel hot electron injection model", C. Huang and T. Wang, Solid-State Electronics, Vol. 38, No.2 p. 461-464, 1995
16. "The numerical simulation of gate and substrate currents in MOS and EPROMs", A. Concannon, F. Piccinini, A. Mathewson and C. Lombardi, IEDM 1995, p. 289-292.
17. "The hydrodynamic model of current transport in semiconductors", A. Gnudi and M. Rudan, European School Device Modelling, Bologna, 1991.
18. "Computation of drain and substrate currents in ultra-short-channel n-MOSFET's using the hydrodynamic model", K. Rhamat, J. White and D. Antoniadis, IEEE Transactions on CAD, Vol. 12 No. 6, p. 817-824, 1993
19. "Technology Computer Aided Design of Non Volatile Memory Devices", A. Concannon, PhD Thesis, National University of Ireland, 1996
20. "Relaxation time approximation and mixing of hot and cold electron populations", T.J. Bordelon, V.M. Agostinelli, Jun, X.L. Wang, C. M. Maziar and A. F. Tasch, Electronics Letters, Vol 28, No. 12, p. 1173-1175, 1992.
21. "Incorporating full band structure effects in the spherical harmonics expansion of the Boltzmann equation", M.C. Vecchi, D. Ventura, A. Gnudi and G. Baccarani, Proceedings of NUPAD V, 1994.
22. "Transport in small semiconductor devices including band-structure and space-charge effects", M. V. Fischetti and S. E. Laux, Physics Rev. B, Vol. 38, p. 9721, 1988.
23. "Modelling impact-ionization in the framework of the spherical harmonics expansion of the boltzmann equation with full band structure effects", M.C. Vecchi and M. Rudan, Proceedings SISDEP, p. 417-420, 1995.
24. "Drain-engineered hot-electron-resistant device structures: A review", J. Sanchez, K. Hsueh and T. Demassa, IEEE Transactions on Electron Devices
25. "Simulating deep sub-micron technologies: An industrial perspective", P. Packan, Proceedings of SISDEP, p. 34-41, 1995.
26. "Analysis and optimisation of the hot-carrier degradation performance of 0.35 μm fully overlapped LDD devices", R. Bellens, P. Habas, G. Groeseneken H.E. Maes, J.P. Mieville, G. Van den Bosch and L. Deferm, Proceedings of IRPS, p. 254-259, 1995
27. "A reliable profiled lightly doped drain (PLD) cell for high density submicrometer EPROMs and flash EEPROMs", K. Yoshikawa, M. Sato and Y. Ohshima, IEEE Transactions on Electron Devices, Vol. 37, No. 4, p. 999-1006, 1990.
28. "Applications of a novel hot carrier injection model in flash EEPROM design", A. Concannon et al, Proceedings of ESSDERC, p. 503, 1994
29. "A new self-consistent modeling approach to investigating MOSFET degradation", W. Hansch et al, IEEE Transactions on Electron Devices, No 11, p. 362, 1990.
30. "Flash EPROM endurance simulation using physics-based models", J. Peng et al, Proceedings of International Elecron Device Meeting, p. 295, 1994.
31. "The relationship between oxide charge and device degradation: A comparitive study of n- and p- channel MOSFET's", A.v.Schwerin, et al, IEEE Transactions on Electron Devices, Vol 34, No. 12, p. 2493, December 1987.
32. "Simulation of hot-electron trapping and ageing of nMOSFETs", P. Roblin et al, IEEE Transactions on Electron Devices, Vol 35, No 12, p. 2229, December 1988.
33. "The threshold-voltage model of MOSFET devices with localised interface charge", Y. Chen et al, IEEE Transactions on Electron Devices, Vol 44, No. 3, p. 441, March 1997.
34. "Designing latch-up robustness in a 0.35 μm technology", A. Amersekera, S. Selvam and R.A. Chapman, Annual Proceedings - Reliability Physics (Symposium), p. 280-285, 1994.
35. "Latch up in CMOS circuits: A review" E. Sangiorgi, C. Fiegna, R. Menozzi, L. Selmi and B. Ricco, European Transactions on Telecommunications and Related Technologies, Vol. 1, p. 337-349, May-June 1990
36. "Analysis of External Latch-up Protection Test Structure Design Using Numerical Simulation", K. Falser, M.Eng.Sc. Thesis, UCC, NUI, 1999
37. "The National Technology Roadmap for Semiconductors" Semiconductor Industry Association (SIA), report published by SEMATECH (http://www.sematech.org/public/roadmap)
38. "An analysis of the quality and reliability supplement to the SIA roadmap", R.W. Thomas, Special Issue of Microelectronics Reliability Journal, Vol. 38, No's 6-8, p. 861-868, 1998.
39. "Stress-voiding in tungsten-plug interconnect systems induced by high-temperature processing", J.A. Walls. Electron.Dev.Lett., Vol. 16, N. 10, 1995.
40. "Thermo-mechanical stress induced voiding in a tungsten-AlCu interconnect system", B. Wallace, Y.H. Lee, D. Pantuso, K. Wu and N. Mielke, Proc. IEEE International Reliability Physics Symposium, p. 303, 1999.
41. N.J. Attardo, R. Rutledge and R.C. Jack, J. Appl. Phys., 42, 4343, (1971).
42. K. Hinode, T. Furusava, and Y. Homma, Proc. IEEE International Reliability Physics Symposium, p. 205 (1992).
43. J.D. Venables and R.G. Lye, Proc. IEEE, 1972, 10, 159.
44. R.A. Sigsbee, J. Appl. Phys., 1973, 44, 513.
45. K. Nikata, Proc. IEEE, 1981, 19, 175.
46. "Simulation of electromigration damage in chip level interconnect lines: A grain structure based statistical approach", M.A. Korhonen, T.M. Korhonen, D.D. Brown and C.Y. Li, Proceedings IEEE IRPS '99 Conference, pp. 227-232
47. H. Huntingdon, A. Kalukin, P.P. Meng, Y.T. Shy and S. Ahmad, J. Appl. Phys., 1991, 70, 1359.
48. "Modelling electromigration and stress migration damage in advanced interconnect structures", D. Brown, Mat. Res. Soc. Symp. Proc. Vol. 516 1998 p. 135-146
49. "Modelling of failure time distributions for interconnects due to stress voiding and electromigration", W.G. Wolfer, M.C. Bartelt, J.J. Dike, J.J. Hoyt, R.J. Gleixner and W.D. Nix, Mat. Res. Soc. Symp. Proc. Vol. 516 1998 p. 147-158
50. "Computer simulation of electromigration in thinfilm metal conductors", J. Appl. Phys. 75 (12) 1994 7799
51. "Electromigration reliability simulator", J. Niehof, D.C.L. Van Geest and J.F. Verwey, Mat. Res. Soc. Symp. Proc. Vol. 265 1992.
52. "Electromigration - A brief survey and some recent results", J.R. Black, IEEE Trans. Electron Dev., ED-16, 338 (1969).
53. "Electromigration failure modes in aluminium metallization for semiconductor devices", J.R. Black. Proc. IEEE. 57, 1587 (1969).
54. "Reliability modelling for electromigration failure", J.R. Lloyd, Quality and Reliability Engineering International, Vol. 10, 303-308 (1994)
55. "Measurement of three dimensional stress and modelling of stress induced migration failure in aluminium interconnects", A. Tezaki, T. Mineta, and H. Egawa, Proc. IEEE International Reliability Physics Symposium, p. 221 (1990).
56. T.D. Sullivan, Applied Phys. Lett., 55, 2399, (1989)
57. "A model for stress-induced metal notching and voiding in very large scale integrated Al-Si (1%) metallization", J.W. McPherson and C.F. Dunn, J. Vac. Sci. Technol., B5, 1321, (1987)
58. F.G. Yost and F.E. Campbell, IEEE Circuits and Devices, 40, (May 1990)
59. "A simple model for stress voiding in passivated thin film conductors", J.R. Lloyd and E. Arzt. Mat. Res. Soc. Symp. Proc. Vol. 265 1992.
60. "Stress-induced phenomena in metallization", A.I. Sauter and W.D. Nix, Journal of Materials Research 7,5, p. 1133-1325, (1987).
61. "Reliability Implications of Mechanical Interactions between Thin Films", J. Coughlan, M.Eng.Sc, Thesis - NMRC, July, 1998.
62. Swanson Analysis Systems, Inc.., P.O. Box 65, Johnson Road, Houston, PA 15342-0065, ANSYS Users Manual.
63. "Investigation of current crowding in W-plug/Al metallization with barrier layers and ARCs by numerical simulation", C. O'Sullivan, M. Rohan, A. Mathewson and R. Augur, ESREF Conf. Proc., 247 (1995)
64. "3-dimensional simulations of temperature and current density distribution in a via structure," K. Weide and W. Hasse, Proc. IEEE International Reliability Physics Symposium, p. 361 (1992).
65. "Investigations of stress distributions in tungsten-filled via structures using finite element analysis", J. Coughlan, S. Foley and A. Mathewson, Proc ESREF Conf. 1997 pp 1549 - Special Issue of Microelectronics Reliability Journal
66. "Finite element analysis of stress distributions in interconnect structures", J. Coughlan, S. Foley and A. Mathewson, Proc ESSDERC Conf. 1997 pp 452
67. "Via delamination - A novel electromigration failure mechanism", Y.H. Lee, K. Wu, N. Mielke, L.J. Ma, and S. Hui, Proc. IEEE International Reliability Physics Symposium, (1997).
68. "Projecting interconnect electromigration lifetime for arbitrary current waveforms," B.K. Liew, N.W. Cheung, and C. Hu, IEEE Transactions on Electron Devices, 1990, Vol.37, No.5, pp. 1343-1351
69. "Dependence of electromigration induced failure time on length and width of aluminium thin-film conductor", B.N. Agarwala, M.J. Attardo, and A.P. Ingraham, J. Appl. Phys., Vol. 41, No. 10, p. 3954, 1979.
70. "A model for the width dependence of electromigration lifetimes in aluminium thin-film stripes", E. Kinsbron, J. Appl. Phys. Vol. 36, no. 12, p. 968, 1980.
71. J. Molyneaux, N. Finucane, J. Prendergast, S. Houlihan, International Integrated Reliability Workshop Final Report, 1996, pp.16-19
72. J.W. McPherson, International Integrated Reliability Workshop Final Report, 1996, pp.1-15
73. H.A. Schafft, D.L. Erhart, W.K. Gladden, Microelectronics and Reliability, 1997, Vol. 37, No. 1, pp. 3-18
74. D.L. Erhart, H.A. Schafft, W.K. Gladden, International Integrated Reliability Workshop Final Report, 1996, pp. 5-10
75. "Hot carrier effect - A fading concern or a growing problem?", Z. Liu, Integrated System Design Magazine, 1998, http://www.eedesign.com/Editorial/1998/Viewpoint9 802.html
76. "An integrated-circuit reliability simulator - Rely," B.J. Sheu, W.J. Hsu and B.W. Lee, IEEE Journal of Solid-State Circuits (24), pp. 473-477, 1989.
77. "Berkeley reliability tools - Bert", R.H. Tu, E. Rosenbaum, W.Y. Chan, C.C. Li, E.R. Minami, K.N. Quader, P.K. Ko and C. Hu, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 12, pp. 1524-1534, 1993.
78. "Circuit Aging Simulator (CAS)", P. Lee, M. Kuo, P. Ko and C. Hu, International Electron Device Meeting (IEDM) Technical Digest, p. 134, Dec. 1988.
79. "IC reliability simulation", C. Hu, IEEE Journal of Solid-State Circuits 27, pp. 241-246, 1992.
80. "ILLIADS: A fast timing and reliability simulator for digital MOS circuits," Y.H. Shih, Y. Leblebici and S.M. Kang, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems (13), pp. 1387-1402, 1993.
81. "iRULE: Fast hot-carrier reliability diagnosis using macro-models", C.C. Teng, W. Sun, and S.M. Kang, 1994 IEEE Custom Integrated Circuits Conference (CICC), pp. 421-424, May 1994.
82. "A physical and scalable I-V model in BSIM3v3 for analog/digital circuit simulation", Y. Cheng, M. Jeng, Z. Liu, J. Huang, M. Chan, K. Chen, P.K. Ko and C. Hu, IEEE Transactions on Electron Devices 44, pp. 277-287, 1997.
83. "Direct parameter extraction for hot-carrier reliability simulation", S. Minehane, S. Healy, P. O'Sullivan, K. McCarthy, A. Mathewson and B. Mason, Microelectronics Reliability, 37 (10-11), pp. 1437-1440, 1997.
84. P.-C.Li, G.I.Stamoulis, I.N.Hajj, Proc. International Reliability Physics Symposium (IRPS), pp. 274-279, 1994.
85. P. Olivo, T.N. Nguyen and B. Ricco, IEEE Transactions on Electron Devices, Vol. 35, No. 12, December 1988, pp. 2259-226
86. R. Moazzami and C. Hu, International Electron Devices Meeting (IEDM'92), pp. 139-142
87. A. Scarpa, P. Ries, G. Ghibaudo, A. Paccagnella, G. Pananakakis, J. Brini, G. Ghidini and C. Papadas, Proc. ESSDERC'97, pp. 592-595
88. E. Vincent, S.Bruyere, C. Papadas, P. Mortini, Microelectronics Reliability, Vol. 37 No. 10/11, pp. 1499-1506, 1997
89. A. Scarpa, G. Ghibaudo, G. Pananakakis, A. Paccagnella, G. Ghidini, Electronics Letters, Jul 17 1997, Vol.33, No.15, pp. 1342-1344
90. S.-H. Lee, B.-J. Cho, J.-C. Kim and S.-H. Choi, International Electron Devices Meeting (IEDM'94) pp. 605-608
91. M. Depas, M.M. Heyns and P.W. Mertens Proceedings of ESSDERC '95, pp. 235-238
92. M. Depas, T. Nigam and M.M. Heyns, IEEE Transactions on Electron Devices, Vol. 43, No. 9, December 1996, pp. 1499-1504
93. O. Briere, J.A. Chroboczek and G. Ghibaudo Proceedings ESSDERC'96, pp. 759-762, Baccarani and Rudan (editors), Editions Frontieres
94. J. Maserjan, Journal of Vacumn Science and Technology, Vol. 11, No. 6, 1974 pp. 996-1003
95. C. Chang, R.W. Brodersen and C. Hu Proceedings INFOS'83, Verweij and Wolters Ed., Elsevier, pp. 177-180
96. M. Hirose, Materials Science and Engineering B41 (1996) pp. 35-38
97. B. J. Fishbein and D.B. Jackson, Proc. International Reliability Physics Symposium (IRPS'90), pp. 159-163
98. C. Papadas, G. Ghibaudo, G, Pananakakis and C. Riva, Solid State Electronics, Vol. 36, No. 9 pp. 1303-1311, 1993
99. C. Papadas, G. Ghibaudo, G, Pananakakis C. Riva, F. Pio and P. Ghezzi, Proceedings ESREF 1993
100. C. Papadas, G. Ghibaudo, P. Mortini and G. Pananakakis, Electronics Letters, 1993, vol. 29, no. 1
101. O. Briere, A. Halimou, A. Straboni, G. Ghibaudo, Solid State Electronics, vol. 41, no. 7, pp. 987-990, 1997
102. R. Degraeve, J.L. Ogier, R. Bellens, P.J. Roussel, G. Groeseneken, H.E. Maes IEEE Transactions on Electron Devices, 1998, Vol. 45, No. 2, pp. 472-481
103. R. Degraeve, P. Roussel, G. Groeseneken, H.E. Maes, Microelectronics and Reliability, 1996, Vol. 36, No. 11-12, pp. 1639-1642
104. E. Rosenbaum et al., International Electron Devices Meeting (IEDM'89), pp. 331-334, 1989
105. A. Berman, International Reliability Physics Symposium (IRPS), pp. 204-209, 1981.
106. J.C. Lee, I.C. Chen, IEEE Transactions on Electron Devices, vol. 35, n. 12, pp. 2268-2278, 1988
107. J.S. Suehle, P. Chaparala, C. Messick, W.M. Miller, K.C. Boyko, Proceedings the Integrated Reliability Workshop (IRW), pp.59-67, 1993.