Stress induced leakage current dependence on oxide thickness, technology and stress level

European Solid-State Device Research Conference

Volumn , Issue , 1997, Pages 592-595

  Scarpa, A ^a   Ries, P ^b   Ghibaudo, G ^b   Paccagnella, A ^a   Pananakakis, G ^b   Brini, J ^b   Ghidini, G ^c   Papadas, C ^c  

^a Dipartimenio di Eleitronica e Informatica Università di Padcwa Via Gradenigo   (Italy)

^b Grenoble INP Phelma   (France)

^c STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CONSTANT CURRENT STRESS; OXIDE THICKNESS; PREDICTION MODEL; STRESS CURRENT DENSITY; STRESS LEVELS; STRESS-INDUCED LEAKAGE CURRENT;

EID: 84907506538     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.1997.194498     Document Type: Conference Paper

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7. 7, A Scarpa et al, INFOS 97, Goteborg (Sweden),, (1997).
8. A. Scarpa er al., submitted to JAP.