Performance degradation of N-channel MOS transistors during DC and pulsed Fowler-Nordheim stress

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 1990, Pages 159-163

  Fishbein, Bruce J ^a   Jackson, Daniel B ^a  

^a HEWLETT PACKARD COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS; SEMICONDUCTOR DEVICES, MOS--ELECTRIC PROPERTIES;

ELECTRON CHARGE; FOWLER-NORDHEIM STRESS; N-CHANNEL MOS TRANSISTORS; PEAK TRANSCONDUCTANCE;

TRANSISTORS, FIELD EFFECT;

EID: 0025638819     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)