Quasi-breakdown of ultrathin gate oxide under high field stress

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1994, Pages 605-608

  Lee, Seok Hee ^a   Cho, Byung Jin ^a   Kim, Jong Choul ^a   Choi, Soo Han ^a  

^a Hynix Semiconductor Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CURRENTS; ELECTRIC FIELD EFFECTS; ELECTRIC PROPERTIES; GATES (TRANSISTOR); OXIDES; RELIABILITY; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR INSULATOR BOUNDARIES; THIN FILMS; VOLTAGE MEASUREMENT;

QUASI BREAKDOWN; ULTRATHIN GATE OXIDE;

MOS DEVICES;

EID: 0028755085     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)