Thermo-mechanical stress induced voiding in a tungsten-AlCu interconnect system

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 1999, Pages 303-309

  Wallace, B ^a   Lee, Y H ^a   Pantuso, D ^a   Wu, K ^a   Mielke, N ^a  

^a INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM ALLOYS; COMPUTER SIMULATION; CURRENT DENSITY; DEFECTS; FAILURE ANALYSIS; FINITE ELEMENT METHOD; INTERFACES (MATERIALS); METALLIZING; MICROPROCESSOR CHIPS; STRESSES; THERMAL EFFECTS; TUNGSTEN;

CURRENT STRESS; FAILURE RATE; JOULE HEATING; THERMOMECHANICAL STRESS; VIA QUALITY; VOIDING;

INTEGRATED CIRCUIT MANUFACTURE;

EID: 0032670475     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (17)