A new model for the field dependence of intrinsic and extrinsic time-dependent dielectric breakdown

IEEE Transactions on Electron Devices

Volumn 45, Issue 2, 1998, Pages 472-481

  Degraeve, R ^a   Ogier, J L ^a   Bellens, R ^a   Roussel, P J ^b   Groeseneken, G ^b   Macs, H E ^b  

^a IMEC   (Belgium)

^b LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGORITHMS; DIELECTRIC PROPERTIES OF SOLIDS; ELECTRIC FIELD EFFECTS; MATHEMATICAL MODELS; STATISTICAL METHODS; WEIBULL DISTRIBUTION;

MAXIMUM LIKELIHOOD ALGORITHMS; TIME DEPENDENT DIELECTRIC BREAKDOWN (TDDB);

ELECTRIC BREAKDOWN OF SOLIDS;

EID: 0032003014     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.658683     Document Type: Article

References (21)

1. F. Pio, L. Ravazzi, and C. Riva, "Influence of series resistance in oxide parameter extraction from accelerated tests data," in Conf. Proc. ESREF'92, 1992, pp. 105-108.
2. J. Prendergast, J. Suehle, P. Chaparala, E. Murphy, and M. Stephenson, "TDDB characterization of thin SiU2 films with bimodal failure populations," in Proc. IRPS, 1995, pp. 124-130.
3. R. Moazzami, J. C. Lee, and C. Hu, "Temperature acceleration of timedependent dielectric breakdown," IEEE Trans. Electron Dev., vol. 36, pp. 2462-2465, Nov. 1989.
4. K. F. Schuegraf and C. Hu, "Effects of temperature and defects on breakdown lifetime of thin SiU2 at very low voltages," in Proc. IRPS, 1994, pp. 126-135.
5. K. V. Sichart and R. P. Vollertsen, "Bimodal lifetime distributions of dielectrics for integrated circuits," Qual. Reliab. Eng. Int., vol. 7, pp. 299-305, 1991.
6. K. C. Boyko and D. L. Gerlach, "Time dependent dielectric breakdown of 210 A oxides," in Proc. IRPS, 1989, pp. 1-8.
7. E. Harari, "Dielectric breakdown in electrically stressed thin films of thermal SiO2," J. Appl. Phys., vol. 49, no. 4, p. 2478, 1978.
8. C. Monsérié, C. Papadas, G. Ghibaudo, C. Gounelle, P. Mortini, and G. Pananakakis, "Correlation between negative bulk oxide charge and breakdown, modeling, and new criteria for dielectric quality evalution," in Proc. IRPS, 1993, pp. 280-284.
9. I. C. Chen, S. E. Holland, and C. Hu, "Electrical breakdown in thin gate and tunneling oxides," IEEE Trans. Electron Devices, vol. ED32, pp. 41322, Feb. 1985.
10. J. C. Lee, I. C. Chen, and C. Hu, "Modeling and characterization of gate oxide reliability," IEEE Trans. Electron Devices, vol. 35, pp. 2268-2278, Dec. 1988.
11. D. J. DiMaria, E. Cartier, and D. Arnold, "Impact ionization, trap creation, degradation, and breakdown in silicon dioxide films on silicon," J. Appl. Phys., vol. 73, no. 7, pp. 3367-3384, 1993.
12. R. Degraeve, G. Groeseneken, I. De Wolf, and H. E. Maes, "Oxide and interface degradation and breakdown under medium and high field injection conditions: A correlation study," Microelectron. Eng. (Proc. INFOS), vol. 28, no. 1, pp. 313-316, 1995.
13. R. Degraeve, G. Groeseneken, R. Bellens, M. Depas, and H. E. Maes, "A consistent model for the thickness dependence of intrinsic breakdown in ultra-thin oxides," in IEDM Tech. Dig., 1995, pp. 863-866.
14. J. Sufie, I. Placencia, N. Barniol, E. Farrés, F. Martin, and X. Aymerich, "On the breakdown statistics of very thin SiO2 films," Thin Solid Films, vol. 185, pp. 347-362, 1990.
15. P. P. Apte and K. C. Saraswat, "Modeling ultrathin dielectric breakdown on correlation of charge trap-generation to charge-to-breakdown," in Proc. IRPS, 1994, pp. 136-142.
16. E. Avni and J. Shappir, "A model for silicon-oxide breakdown under high field and current stress," J. Appl. Phys., vol. 64, pp. 743-748, Feb. 1988.
17. D. J. Dumin, S. Mopuri, S. Vanchinathan, R. S. Scott, R. Subramoniam, and T. G. Lewis, "High field emission related thin oxide wearout and breakdown," in Proc. IRPS, 1994, pp. 143-153.
18. J. W. McPherson and D. A. Baglee, "Acceleration factors for thin gate oxide stressing," in Proc. IRPS, 1985, pp. 1-5.
19. J. L. Ogier, R. Degraeve, P. Roussel, G. Groeseneken, and H. E. Maes, "Analysis of the early-failure rate prediction of time-dependentdielectric breakdown in thin oxides," in Proc. ESSDERC, 1995, pp. 299-303.
20. D. R. Wolters and J. F. Verwey, Instabilities in Silicon Devices. Amsterdam, The Netherlands: Elsevier, 1986, ch. 6, pp. 332-335.
21. N. R. Mann, R. E. Shafer, and N. D. Singpurwalla, Methods for Statistical Analysis of Reliability and Life Data. New York: Wiley, 1974.