The threshold-voltage model of MOSFET devices with localized interface charge

IEEE Transactions on Electron Devices

Volumn 44, Issue 3, 1997, Pages 441-447

  Jean, Yuh Sheng ^a   Wu, Ching Yuan ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY CONDITIONS; CARRIER CONCENTRATION; CURRENT VOLTAGE CHARACTERISTICS; DEGRADATION; DIFFERENTIAL EQUATIONS; ELECTRIC FIELD EFFECTS; ELECTRON ENERGY LEVELS; HOT CARRIERS; NUMERICAL ANALYSIS; SURFACE PROPERTIES;

DRAIN INDUCED BARRIER LOWERING; LOCALIZED INTERFACE CHARGE; POISSON EQUATION; SCREENING EFFECTS; SUBSTRATE BIAS EFFECTS; SURFACE POTENTIAL; THRESHOLD VOLTAGE MODEL;

SEMICONDUCTOR DEVICE MODELS;

EID: 0031102965     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.556154     Document Type: Article

References (14)

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