0.1 μm CMOS devices using low-impurity-channel transistors (LICT)

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1990, Pages 939-941

  Aoki, M ^a   Ishii, T ^a   Yoshimura, T ^a   Kiyota, Y ^a   Iijima, S ^a   Yamanaka, T ^a   Kure, T ^a   Ohyu, K ^a   Nishida, T ^a   Okazaki, S ^a   Seki, K ^a   Shimohigashi, K ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS, CMOS--MANUFACTURE; SEMICONDUCTOR DEVICES, MOS;

CMOS DEVICES; LICT (LOW-IMPURITY-CHANNEL TRANSISTORS);

TRANSISTORS, FIELD EFFECT;

EID: 0025578245     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (1)