Low-frequency noise characterization of self-aligned AlGaAs/GaAs heterojunction bipolar transistors with a noise corner frequency below 3 kHz

IEEE Transactions on Microwave Theory and Techniques

Volumn 46, Issue 11 PART 1, 1998, Pages 1604-1613

  Shin, Jin Ho ^a   Kim, Jiyoung ^a   Chung, Yujin ^a   Lee, Joonwoo ^a   Suh, Youngsuk ^a   Ahn, Kyu Hwan ^a   Kim, Bumman ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

Heterojunction bipolar transistor; I noise; Oscillator; Phase noise

Indexed keywords

CURRENT DENSITY; ELECTRIC RESISTANCE; OSCILLATORS (ELECTRONIC); PASSIVATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SPURIOUS SIGNAL NOISE;

COMPOUND SEMICONDUCTOR TRANSISTORS; PHASE NOISE; SURFACE RECOMBINATION CURRENTS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0032206055     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.734534     Document Type: Article

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