Current Transport Mechanism in GalnP/GaAs Heterojunction Bipolar Transistors

IEEE Transactions on Electron Devices

Volumn 40, Issue 8, 1993, Pages 1378-1383

  Davito, David B ^b   Fan, Shou kong ^a   Kim, Tae S ^a   Beam, Edward A ^a  

^a TEXAS INSTRUMENTS   (United States)

^b Epitronics Corporation ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; ELECTRON ENERGY LEVELS; HETEROJUNCTIONS; SEMICONDUCTING GALLIUM COMPOUNDS;

CARRIER TRANSPORT MECHANISM; CONDUCTION BAND BARRIER; GALLIUM ARSENIDE; GALLIUM INDIUM PHOSPHIDE; HETEROJUNCTION BIPOLAR TRANSISTORS;

BIPOLAR TRANSISTORS;

EID: 0027808079     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.223695     Document Type: Article

References (21)

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