GaAs FET's with a Flicker-Noise Corner Below 1 MHz

IEEE Transactions on Electron Devices

Volumn 34, Issue 4, 1987, Pages 733-741

  Hughes, Brian ^a   Fernandez, Noel G ^a   Gladstone, Jerry M ^a  

^a HEWLETT PACKARD COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING GALLIUM ARSENIDE;

FLICKER NOISE; GALLIUM ARSENIDE FET; GENERATION-RECOMBINATION NOISE;

TRANSISTORS, FIELD EFFECT;

EID: 0023326723     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1987.22989     Document Type: Article

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