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Volumn 14, Issue 12, 1993, Pages 572-574

GaInP/GaAs HBT’s for High-Speed Integrated Circuit Applications

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; DIGITAL INTEGRATED CIRCUITS; MICROWAVE DEVICES; SEMICONDUCTOR DEVICES;

EID: 0027872989     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.260793     Document Type: Article
Times cited : (25)

References (9)
  • 1
    • 0020115535 scopus 로고
    • Heterostructure bipolar transistors: What should we build?
    • H. Kroemer, “Heterostructure bipolar transistors: What should we build?,” J. Vac. Sci. Technol., vol. B1, 126–130, 1983.
    • (1983) J. Vac. Sci. Technol. , vol.B1 , pp. 126-130
    • Kroemer, H.1
  • 2
    • 21544477371 scopus 로고
    • Conduction and valence band offsets in GaAs/GalnP single quantum wells grown by metalorganic chemical vapor deposition
    • D. Biswas, N. Debar, P. Bhattacharya, M. Razeghi, M. Defour, and F. Omnes, “Conduction and valence band offsets in GaAs/GalnP single quantum wells grown by metalorganic chemical vapor deposition,” Appl. Phys. Lett., vol. 56, pp. 833–835, 1990.
    • (1990) Appl. Phys. Lett. , vol.56 , pp. 833-835
    • Biswas, D.1    Debar, N.2    Bhattacharya, P.3    Razeghi, M.4    Defour, M.5    Omnes, F.6
  • 3
    • 0343001109 scopus 로고
    • Band lineup for a GalnP/GaAs heterojunction measured by a high-gain Npn heterojunction bipolar transistors grown by metalorganic chemical vapor deposition
    • T. Kobayashi, K. Taira, F. Nakamura, and H. Kawai, “Band lineup for a GalnP/GaAs heterojunction measured by a high-gain Npn heterojunction bipolar transistors grown by metalorganic chemical vapor deposition,” J. Appl. Phys., vol. 65, no. 12, pp. 4898–4902, 1989.
    • (1989) J. Appl. Phys. , vol.65 , Issue.12 , pp. 4898-4902
    • Kobayashi, T.1    Taira, K.2    Nakamura, F.3    Kawai, H.4
  • 5
    • 0026938337 scopus 로고
    • Low-frequency noise properties of N-p-n AlGaAs/GaAs heterojunction bipolar transistors
    • D. Costa and J. Harris, Jr., “Low-frequency noise properties of N-p-n AlGaAs/GaAs heterojunction bipolar transistors,” IEEE Trans. Electron Devices, vol. 39, pp. 2383–2394, 1992.
    • (1992) IEEE Trans. Electron Devices , vol.39 , pp. 2383-2394
    • Costa, D.1    Harris, J.2
  • 9
    • 0027627261 scopus 로고
    • Temperature Dependence of Current Gains in GalnP/GaAs and AlGaAs/GaAs Heterojunction Bipolar Transistors
    • W. Liu, S.K. Fan, T. Henderson, and D. Davito, “Temperature Dependence of Current Gains in GalnP/GaAs and AlGaAs/GaAs Heterojunction Bipolar Transistors,” IEEE Trans. Electron. Devices, vol. 40, no. 7, pp. 1351–1353, 1993.
    • (1993) IEEE Trans. Electron. Devices , vol.40 , Issue.7 , pp. 1351-1353
    • Liu, W.1    Fan, S.K.2    Henderson, T.3    Davito, D.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.