DC Conduction and Low-Frequency Noise Characteristics of GaAlAs/GaAs Single Heterojunction Bipolar Transistors at Room Temperature and Low Temperatures

IEEE Transactions on Microwave Theory and Techniques

Volumn 39, Issue 6, 1991, Pages 1054-1058

  Raman, V K ^a   Viswanathan, C R ^b   Kim, Michael E ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

NOISE, SPURIOUS SIGNAL - LOW TEMPERATURE EFFECTS; SEMICONDUCTOR MATERIALS - CHARGE CARRIERS; TRANSISTORS - NOISE, SPURIOUS SIGNAL;

BIPOLAR TRANSISTOR DC CONDUCTION; HBT NOISE MODEL; LOW-FREQUENCY NOISE; MINORITY CARRIER TRAPPING EFFECTS; NPN STRUCTURES;

TRANSISTORS, BIPOLAR;

EID: 0026172625     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/22.81681     Document Type: Article

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