Experimental comparison of base recombination currents in abrupt and graded AlGaAs/GaAs heterojunction bipolar transistors

Electronics Letters

Volumn 27, Issue 23, 1991, Pages 2115-2116

  Liu, W ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

Semiconductor devices and materials; Transistors

Indexed keywords

EID: 85011620903     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19911310     Document Type: Article

References (8)

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2. Lee, W. S., Ueda, D., Ma, T., Pao, Y. C., and Harris, J. S.: ‘Effect of emitter-base spacing on the current gain of AlGaAs/GaAs heterojunction bipolar transistor’, IEEE Electron Device Lett., 1989, 10, pp. 200–202
3. Sze, S. M.: ‘Physics of semiconductor devices’ (John Wiley & Sons, New York, 1981), pp. 139–140
4. Muller, R. S., and Kamins, T. I.: ‘Device electronics for integrated circuits’ (John Wiley & Sons, New York, 1977), pp. 209–211
5. Hayes, J. R., Capasso, F., Malik, R. J., Gossard, A. C., and Wiegmann, W.: ‘Optimum emitter grading for heterojunction bipolar transistors’, Appl. Phys. Lett., 1983, 43, pp. 949–951
6. Yoshida, J., Kurata, M., Morizuka, K., and Hojo, A.: ‘Emitter-base bandgap grading effects on GaAlAs/GaAs heterojunction bipolar transistor characteristics’, IEEE Trans., 1985, ED-32, pp. 1714–1721
7. Webster, W. M.: ‘On the variation of junction-transistor current amplification factor with emitter current’, Proc. Ire, 1954, 42, p. 914
8. 1−xAs quantum well’, Phys. Rev. B, 1984, 29, pp. 7085–7087