Reduction of 1/f Noise Current with Non-equilibrium Electron Transport in AlInAs/InGaAs Heterojunction Bipolar Transistors

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1993, Pages 803-806

  Chen, Y K ^a   Fan, L ^a   Humphrey, D A ^a   Tate, A ^a   Sivco, D ^a   Cho, A Y ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRANSPORT PROPERTIES; HETEROJUNCTION BIPOLAR TRANSISTORS; CHARGE CARRIERS; HETEROJUNCTIONS; SEMICONDUCTOR DEVICES;

% REDUCTIONS; 1/F NOISE CORNERS; 1/F NOISE CURRENT; CARRIERS TRANSPORT; CORNER FREQUENCY; ELECTRON TRANSPORT; INPUT NOISE CURRENT DENSITY; NOISE CORNER FREQUENCY; NON-EQUILIBRIUM CARRIERS; NON-EQUILIBRIUM ELECTRONS;

HETEROJUNCTIONS; BIPOLAR TRANSISTORS;

CUT OFF FREQUENCIES; NOISE CURRENT; NON EQUILIBRIUM CARRIER TRANSPORT;

EID: 0027815089     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. Wang, Sheng, Chang, Ho, Sullivan, Sovero, Higgins, Asbeck, IEEE T-MTT, 38, 1381, (1990).
2. Tutt, Pavlidis, Khatibzadeth, Bayraktaroglu, Digest of 1992 IEEE MTT-S, Albuquerque, (1992).
3. Ho, Chang, et al., IEEE 1993 DRC, Santa Barbara, (1993).